Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Lis K. Nanver, Lin Qi, Vahid Mohammadi, K. R.M. Mok, Wiebe B. De Boer, Negin Golshani, Amir Sammak, Thomas L.M. Scholtes, Alexander Gottwald, Udo Kroth, Frank Scholze

Research output: Contribution to journalArticleAcademicpeer-review

49 Citations (Scopus)


This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.

Original languageEnglish
Article number6805604
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number6
Publication statusPublished - 1 Jan 2014
Externally publishedYes


  • Extreme ultraviolet (EUV) light
  • optical degradation
  • p-n junctions
  • pure boron
  • responsivity
  • silicon photodiodes
  • ultraviolet light
  • vacuum ultraviolet light


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