Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Lis K. Nanver; Lin Qi; Vahid Mohammadi; K. R.M. Mok; Wiebe B. De Boer; Negin Golshani; Amir Sammak; Thomas L.M. Scholtes; Alexander Gottwald; Udo Kroth; Frank Scholze

doi:10.1109/JSTQE.2014.2319582

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Lis K. Nanver, Lin Qi, Vahid Mohammadi, K. R.M. Mok, Wiebe B. De Boer, Negin Golshani, Amir Sammak, Thomas L.M. Scholtes, Alexander Gottwald, Udo Kroth, Frank Scholze

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Abstract

This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.

Original language	English
Article number	6805604
Journal	IEEE journal of selected topics in quantum electronics
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2014.2319582
Publication status	Published - 1 Jan 2014
Externally published	Yes

Keywords

Extreme ultraviolet (EUV) light
optical degradation
p-n junctions
pure boron
responsivity
silicon photodiodes
ultraviolet light
vacuum ultraviolet light

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10.1109/JSTQE.2014.2319582

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title = "Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility",

abstract = "This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.",

keywords = "Extreme ultraviolet (EUV) light, optical degradation, p-n junctions, pure boron, responsivity, silicon photodiodes, ultraviolet light, vacuum ultraviolet light",

author = "Nanver, {Lis K.} and Lin Qi and Vahid Mohammadi and Mok, {K. R.M.} and {De Boer}, {Wiebe B.} and Negin Golshani and Amir Sammak and Scholtes, {Thomas L.M.} and Alexander Gottwald and Udo Kroth and Frank Scholze",

year = "2014",

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doi = "10.1109/JSTQE.2014.2319582",

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AU - Nanver, Lis K.

AU - Qi, Lin

AU - Mohammadi, Vahid

AU - Mok, K. R.M.

AU - De Boer, Wiebe B.

AU - Golshani, Negin

AU - Sammak, Amir

AU - Scholtes, Thomas L.M.

AU - Gottwald, Alexander

AU - Kroth, Udo

AU - Scholze, Frank

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.

AB - This paper gives an assessment of old and new data relevant to the optical and electrical performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm. The PureB layer, fabricated by depositing pure boron on Si, forms the anode region of devices that function as $p^{+}n$ junction diodes. The results show that the high sensitivity and high stability of the PureB diodes is related to the integrity of the interface with the Si. When measures are taken to retain a complete PureB coverage, thermal processing steps with minute long exposure to temperatures up to 900 °C do not compromise the robustness and a lower-than-ideal but still high responsivity is maintained. Besides the thermal processing considerations, other aspects that impact the integration of PureB in CMOS are reviewed.

KW - Extreme ultraviolet (EUV) light

KW - optical degradation

KW - p-n junctions

KW - pure boron

KW - responsivity

KW - silicon photodiodes

KW - ultraviolet light

KW - vacuum ultraviolet light

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JO - IEEE journal of selected topics in quantum electronics

JF - IEEE journal of selected topics in quantum electronics

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M1 - 6805604

ER -

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

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Keywords

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