Robust X-band LNAs in AlGaN/GaN technology

J.P.B. Janssen; M. van Heiningen; G.C. Visser; M. Rodenburg; H.K. Johnson; M.J. Uren; E. Morvan; Frank Edward van Vliet

Robust X-band LNAs in AlGaN/GaN technology

J.P.B. Janssen, M. van Heiningen, G.C. Visser, M. Rodenburg, H.K. Johnson, M.J. Uren, E. Morvan, Frank Edward van Vliet

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.

Original language	Undefined
Title of host publication	Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Publisher	IEEE
Pages	101-104
Number of pages	4
ISBN (Print)	978-1-4244-4749-7
Publication status	Published - 28 Sept 2009
Event	4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 28 Sept 2009 → 29 Sept 2009 Conference number: 4

Publication series

Name
Publisher	IEEE

Conference

Conference	4th European Microwave Integrated Circuits Conference, EuMIC 2009
Abbreviated title	EuMIC
Country/Territory	Italy
City	Rome
Period	28/09/09 → 29/09/09

Keywords

IR-76686
EWI-19999
METIS-276421

Access to Document

Cite this

@inproceedings{d697867f974e40cca737f32a712c966f,

title = "Robust X-band LNAs in AlGaN/GaN technology",

abstract = "Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.",

keywords = "IR-76686, EWI-19999, METIS-276421",

author = "J.P.B. Janssen and \{van Heiningen\}, M. and G.C. Visser and M. Rodenburg and H.K. Johnson and M.J. Uren and E. Morvan and \{van Vliet\}, \{Frank Edward\}",

year = "2009",

month = sep,

day = "28",

language = "Undefined",

isbn = "978-1-4244-4749-7",

publisher = "IEEE",

pages = "101--104",

booktitle = "Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European",

address = "United States",

note = "4th European Microwave Integrated Circuits Conference, EuMIC 2009 ; Conference date: 28-09-2009 Through 29-09-2009",

}

Janssen, JPB, van Heiningen, M, Visser, GC, Rodenburg, M, Johnson, HK, Uren, MJ, Morvan, E & van Vliet, FE 2009, Robust X-band LNAs in AlGaN/GaN technology. in Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. IEEE, pp. 101-104, 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, Italy, 28/09/09. <http://eprints.eemcs.utwente.nl/secure2/19999/01/EuMIC_2009.pdf>

TY - GEN

T1 - Robust X-band LNAs in AlGaN/GaN technology

AU - Janssen, J.P.B.

AU - van Heiningen, M.

AU - Visser, G.C.

AU - Rodenburg, M.

AU - Johnson, H.K.

AU - Uren, M.J.

AU - Morvan, E.

AU - van Vliet, Frank Edward

N1 - Conference code: 4

PY - 2009/9/28

Y1 - 2009/9/28

N2 - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.

AB - Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology and in the QinetiQ AlGaN/GaN coplanar waveguide technology. Both LNAs operate at X-band. An input power handling of >41 dBm for the first iteration design of the Alcatel-Thales III-V lab version has been published. The designs and measurement results of the two realised low noise amplifiers are presented in this paper. The results show that gallium nitride is a suitable technology for robust receiver design.

KW - IR-76686

KW - EWI-19999

KW - METIS-276421

M3 - Conference contribution

SN - 978-1-4244-4749-7

SP - 101

EP - 104

BT - Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

PB - IEEE

T2 - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Y2 - 28 September 2009 through 29 September 2009

ER -