Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate

R. Sobierajski, I. Jacyna, P. Dluzewski, M. Klepka, D. Klinger, J.B. Pelka, T. Burian, V. Hajkova, L. Juha, K. Saksl, V. Vozda, Igor Alexandrovich Makhotkin, Eric Louis, B. Faatz, K. Tiedtke, S. Toleikis, H. Enkisch, M. Hermann, S. Strobel, R.A. LochJ. Chalupsky

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Abstract

The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.
Original languageEnglish
Pages (from-to)15468-15477
Number of pages10
JournalOptics express
Volume24
Issue number14
DOIs
Publication statusPublished - 29 Jun 2016

Keywords

  • METIS-317161
  • IR-100631

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    Sobierajski, R., Jacyna, I., Dluzewski, P., Klepka, M., Klinger, D., Pelka, J. B., ... Chalupsky, J. (2016). Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate. Optics express, 24(14), 15468-15477. https://doi.org/10.1364/OE.24.015468