Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate

R. Sobierajski; I. Jacyna; P. Dluzewski; M. Klepka; D. Klinger; J.B. Pelka; T. Burian; V. Hajkova; L. Juha; K. Saksl; V. Vozda; Igor Alexandrovich Makhotkin; Eric Louis; B. Faatz; K. Tiedtke; S. Toleikis; H. Enkisch; M. Hermann; S. Strobel; R.A. Loch; J. Chalupsky

doi:10.1364/OE.24.015468

Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate

R. Sobierajski, I. Jacyna, P. Dluzewski, M. Klepka, D. Klinger, J.B. Pelka, T. Burian, V. Hajkova, L. Juha, K. Saksl, V. Vozda, Igor Alexandrovich Makhotkin, Eric Louis, B. Faatz, K. Tiedtke, S. Toleikis, H. Enkisch, M. Hermann, S. Strobel, R.A. LochJ. Chalupsky

XUV Optics

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Abstract

The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

Original language	English
Pages (from-to)	15468-15477
Number of pages	10
Journal	Optics express
Volume	24
Issue number	14
DOIs	https://doi.org/10.1364/OE.24.015468
Publication status	Published - 29 Jun 2016

Keywords

METIS-317161
IR-100631

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Sobierajski, R., Jacyna, I., Dluzewski, P., Klepka, M., Klinger, D., Pelka, J. B., Burian, T., Hajkova, V., Juha, L., Saksl, K., Vozda, V., Makhotkin, I. A., Louis, E., Faatz, B., Tiedtke, K., Toleikis, S., Enkisch, H., Hermann, M., Strobel, S., ... Chalupsky, J. (2016). Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate. Optics express, 24(14), 15468-15477. https://doi.org/10.1364/OE.24.015468

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title = "Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate",

abstract = "The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.",

keywords = "METIS-317161, IR-100631",

author = "R. Sobierajski and I. Jacyna and P. Dluzewski and M. Klepka and D. Klinger and J.B. Pelka and T. Burian and V. Hajkova and L. Juha and K. Saksl and V. Vozda and Makhotkin, {Igor Alexandrovich} and Eric Louis and B. Faatz and K. Tiedtke and S. Toleikis and H. Enkisch and M. Hermann and S. Strobel and R.A. Loch and J. Chalupsky",

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year = "2016",

month = jun,

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doi = "10.1364/OE.24.015468",

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Sobierajski, R, Jacyna, I, Dluzewski, P, Klepka, M, Klinger, D, Pelka, JB, Burian, T, Hajkova, V, Juha, L, Saksl, K, Vozda, V, Makhotkin, IA, Louis, E, Faatz, B, Tiedtke, K, Toleikis, S, Enkisch, H, Hermann, M, Strobel, S, Loch, RA & Chalupsky, J 2016, 'Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate', Optics express, vol. 24, no. 14, pp. 15468-15477. https://doi.org/10.1364/OE.24.015468

TY - JOUR

T1 - Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate

AU - Sobierajski, R.

AU - Jacyna, I.

AU - Dluzewski, P.

AU - Klepka, M.

AU - Klinger, D.

AU - Pelka, J.B.

AU - Burian, T.

AU - Hajkova, V.

AU - Juha, L.

AU - Saksl, K.

AU - Vozda, V.

AU - Makhotkin, Igor Alexandrovich

AU - Louis, Eric

AU - Faatz, B.

AU - Tiedtke, K.

AU - Toleikis, S.

AU - Enkisch, H.

AU - Hermann, M.

AU - Strobel, S.

AU - Loch, R.A.

AU - Chalupsky, J.

N1 - Open access

PY - 2016/6/29

Y1 - 2016/6/29

N2 - The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

AB - The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm2. Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm2) and liquid state (54 mJ/cm2), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.

KW - METIS-317161

KW - IR-100631

U2 - 10.1364/OE.24.015468

DO - 10.1364/OE.24.015468

M3 - Article

SN - 1094-4087

VL - 24

SP - 15468

EP - 15477

JO - Optics express

JF - Optics express

IS - 14

ER -

Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 Mhz repetition rate

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Keywords

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