We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.
|Title of host publication||Proceeding of European Solid State Device Research Conference (ESSDERC 2013)|
|Place of Publication||USA|
|Number of pages||4|
|Publication status||Published - 16 Sep 2013|
|Event||43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania|
Duration: 16 Sep 2013 → 20 Sep 2013
Conference number: 43
|Conference||43rd European Solid-State Device Research Conference, ESSDERC 2013|
|Period||16/09/13 → 20/09/13|
- LEDssilicon photonicspin diodecarrier injectorultra-shallow junctionelectroluminescence
Piccolo, G., Sammak, A., Hueting, R. J. E., Schmitz, J., & Nanver, L. K. (2013). Role of junction depth in light emission from silicon p-i-n LEDs. In Proceeding of European Solid State Device Research Conference (ESSDERC 2013) (pp. 119-122). USA: IEEE.