Role of junction depth in light emission from silicon p-i-n LEDs

G. Piccolo; A. Sammak; Raymond Josephus Engelbart Hueting; Jurriaan Schmitz; Lis Karen Nanver

Role of junction depth in light emission from silicon p-i-n LEDs

G. Piccolo, A. Sammak, Raymond Josephus Engelbart Hueting, Jurriaan Schmitz, Lis Karen Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.

Original language	Undefined
Title of host publication	Proceeding of European Solid State Device Research Conference (ESSDERC 2013)
Place of Publication	USA
Publisher	IEEE
Pages	119-122
Number of pages	4
ISBN (Print)	978-1-4799-0649-9
Publication status	Published - 16 Sep 2013
Event	43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania Duration: 16 Sep 2013 → 20 Sep 2013 Conference number: 43

Publication series

Name
Publisher	IEEE

Conference

Conference	43rd European Solid-State Device Research Conference, ESSDERC 2013
Abbreviated title	ESSDERC
Country/Territory	Romania
City	Bucharest
Period	16/09/13 → 20/09/13

Keywords

LEDssilicon photonicspin diodecarrier injectorultra-shallow junctionelectroluminescence
METIS-297984
IR-87591
EWI-24494

Access to Document

http://eprints.eemcs.utwente.nl/secure2/24494/01/Piccolo_JunctionDepthLightEmission_Si_pin_LEDs_SDC13.pdf

Cite this

@inproceedings{2b3aacd571bb4b468cffeb46c3fa7cab,

title = "Role of junction depth in light emission from silicon p-i-n LEDs",

abstract = "We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.",

keywords = "LEDssilicon photonicspin diodecarrier injectorultra-shallow junctionelectroluminescence, METIS-297984, IR-87591, EWI-24494",

author = "G. Piccolo and A. Sammak and Hueting, {Raymond Josephus Engelbart} and Jurriaan Schmitz and Nanver, {Lis Karen}",

note = "http://essderc2013.imt.ro/index.shtml; null ; Conference date: 16-09-2013 Through 20-09-2013",

year = "2013",

month = sep,

day = "16",

language = "Undefined",

isbn = "978-1-4799-0649-9",

publisher = "IEEE",

pages = "119--122",

booktitle = "Proceeding of European Solid State Device Research Conference (ESSDERC 2013)",

}

Piccolo, G, Sammak, A, Hueting, RJE , Schmitz, J & Nanver, LK 2013, Role of junction depth in light emission from silicon p-i-n LEDs. in Proceeding of European Solid State Device Research Conference (ESSDERC 2013). IEEE, USA, pp. 119-122, 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, 16/09/13. <http://eprints.eemcs.utwente.nl/secure2/24494/01/Piccolo_JunctionDepthLightEmission_Si_pin_LEDs_SDC13.pdf>

TY - GEN

T1 - Role of junction depth in light emission from silicon p-i-n LEDs

AU - Piccolo, G.

AU - Sammak, A.

AU - Hueting, Raymond Josephus Engelbart

AU - Schmitz, Jurriaan

AU - Nanver, Lis Karen

N1 - Conference code: 43

PY - 2013/9/16

Y1 - 2013/9/16

N2 - We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.

AB - We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.

KW - LEDssilicon photonicspin diodecarrier injectorultra-shallow junctionelectroluminescence

KW - METIS-297984

KW - IR-87591

KW - EWI-24494

M3 - Conference contribution

SN - 978-1-4799-0649-9

SP - 119

EP - 122

BT - Proceeding of European Solid State Device Research Conference (ESSDERC 2013)

PB - IEEE

CY - USA

Y2 - 16 September 2013 through 20 September 2013

ER -