Role of junction depth in light emission from silicon p-i-n LEDs

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We present a study of lateral silicon p-i-n light- emitting diodes, fabricated on SOI substrates. The p+ and n+ junctions were varied between conventional and ultra-shallow, utilizing pure-B and pure-P doping techniques. The impact of junction changes on both current-voltage behavior and light emission is discussed, based on experimental results and device modeling. The results stipulate that only a balanced carrier injection leads to efficient light emission and that uniform light emission across the intrinsic region can be obtained with a well- chosen p-i-n architecture.
    Original languageUndefined
    Title of host publicationProceeding of European Solid State Device Research Conference (ESSDERC 2013)
    Place of PublicationUSA
    PublisherIEEE
    Pages119-122
    Number of pages4
    ISBN (Print)978-1-4799-0649-9
    Publication statusPublished - 16 Sep 2013
    Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
    Duration: 16 Sep 201320 Sep 2013
    Conference number: 43

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
    Abbreviated titleESSDERC
    CountryRomania
    CityBucharest
    Period16/09/1320/09/13

    Keywords

    • LEDssilicon photonicspin diodecarrier injectorultra-shallow junctionelectroluminescence
    • METIS-297984
    • IR-87591
    • EWI-24494

    Cite this

    Piccolo, G., Sammak, A., Hueting, R. J. E., Schmitz, J., & Nanver, L. K. (2013). Role of junction depth in light emission from silicon p-i-n LEDs. In Proceeding of European Solid State Device Research Conference (ESSDERC 2013) (pp. 119-122). USA: IEEE.