Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature

Jan M. Dekkers; Augustinus J.H.M. Rijnders; David H.A. Blank

doi:10.1063/1.2195096

Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature

Jan M. Dekkers, Augustinus J.H.M. Rijnders, David H.A. Blank

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.

Original language	Undefined
Pages (from-to)	151908-
Number of pages	3
Journal	Applied physics letters
Volume	88
Issue number	15
DOIs	https://doi.org/10.1063/1.2195096
Publication status	Published - 2006

Keywords

IR-59195
METIS-234960

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.2195096

Cite this

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title = "Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature",

abstract = "The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.",

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AU - Blank, David H.A.

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N2 - The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.

AB - The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.

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