Abstract
The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.
Original language | Undefined |
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Pages (from-to) | 151908- |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 88 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2006 |
Keywords
- IR-59195
- METIS-234960