The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.