Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature

Jan M. Dekkers, Augustinus J.H.M. Rijnders, David H.A. Blank

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The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.
Original languageUndefined
Pages (from-to)151908-
Number of pages3
JournalApplied physics letters
Issue number15
Publication statusPublished - 2006


  • IR-59195
  • METIS-234960

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