Quantum confinement effects in silicon nanostructures have been studied over the past 3 decades , with aim to convert silicon into direct bandgap-like semiconductor for applications as efficient light emitters, even amplifiers and lasers. We have shown that slightly electronegative ligands on the surface of silicon quantum dot (Si-QD) and/or varying electrostatic field from the environment manipulates the electronic density inside the Si-QD’s core, ultimately resulting in an indirect-to-direct bandgap conversion [2,3]. To test the role of charge distribution induced by ligands and environment experimentally, we synthesize colloidal Si-QDs capped by butyl chains using oxygen-free wet chemical method  and introduce two terminations, amine (-NH2) and carboxylic acid (-COOH). Si-QDs are dispersed in aqueous solutions of varying pH. The push-pull effect on the electronic wave-functions translates into changes in band-gap (emission spectrum and absorption band-edge) and emission lifetime. Results are interpreted and discussed within the frame of our theoretical simulations by tight binding and DFT.
|Number of pages||1|
|Publication status||Published - 2017|
|Event||E-MRS spring meeting 2017 - Strasbourg, France|
Duration: 22 May 2017 → 26 May 2017
|Conference||E-MRS spring meeting 2017|
|Period||22/05/17 → 26/05/17|