Abstract
| Original language | English |
|---|---|
| Number of pages | 1 |
| Publication status | Published - 2017 |
| Event | E-MRS spring meeting 2017 - Strasbourg, France Duration: 22 May 2017 → 26 May 2017 |
Conference
| Conference | E-MRS spring meeting 2017 |
|---|---|
| Country | France |
| City | Strasbourg |
| Period | 22/05/17 → 26/05/17 |
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Role of surface charge distribution on band-structure and optical properties of silicon nanocrystals. / Huang, Chia-Ching; Nie, Hui ; Paulusse, Jos M.J.; Wilbrink, Jonathan; Dohnalová, Katerina.
2017. Poster session presented at E-MRS spring meeting 2017, Strasbourg, France.Research output: Contribution to conference › Poster
TY - CONF
T1 - Role of surface charge distribution on band-structure and optical properties of silicon nanocrystals
AU - Huang, Chia-Ching
AU - Nie, Hui
AU - Paulusse, Jos M.J.
AU - Wilbrink, Jonathan
AU - Dohnalová, Katerina
PY - 2017
Y1 - 2017
N2 - Quantum confinement effects in silicon nanostructures have been studied over the past 3 decades [1], with aim to convert silicon into direct bandgap-like semiconductor for applications as efficient light emitters, even amplifiers and lasers. We have shown that slightly electronegative ligands on the surface of silicon quantum dot (Si-QD) and/or varying electrostatic field from the environment manipulates the electronic density inside the Si-QD’s core, ultimately resulting in an indirect-to-direct bandgap conversion [2,3]. To test the role of charge distribution induced by ligands and environment experimentally, we synthesize colloidal Si-QDs capped by butyl chains using oxygen-free wet chemical method [3] and introduce two terminations, amine (-NH2) and carboxylic acid (-COOH). Si-QDs are dispersed in aqueous solutions of varying pH. The push-pull effect on the electronic wave-functions translates into changes in band-gap (emission spectrum and absorption band-edge) and emission lifetime. Results are interpreted and discussed within the frame of our theoretical simulations by tight binding and DFT.
AB - Quantum confinement effects in silicon nanostructures have been studied over the past 3 decades [1], with aim to convert silicon into direct bandgap-like semiconductor for applications as efficient light emitters, even amplifiers and lasers. We have shown that slightly electronegative ligands on the surface of silicon quantum dot (Si-QD) and/or varying electrostatic field from the environment manipulates the electronic density inside the Si-QD’s core, ultimately resulting in an indirect-to-direct bandgap conversion [2,3]. To test the role of charge distribution induced by ligands and environment experimentally, we synthesize colloidal Si-QDs capped by butyl chains using oxygen-free wet chemical method [3] and introduce two terminations, amine (-NH2) and carboxylic acid (-COOH). Si-QDs are dispersed in aqueous solutions of varying pH. The push-pull effect on the electronic wave-functions translates into changes in band-gap (emission spectrum and absorption band-edge) and emission lifetime. Results are interpreted and discussed within the frame of our theoretical simulations by tight binding and DFT.
M3 - Poster
ER -