Role of topographical defects in organic film growth of 4,4'-biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study

F.S. Khokhar, Raoul van Gastel, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)
Original languageEnglish
Pages (from-to)205409-
JournalPhysical review B: Condensed matter and materials physics
Volume82
Issue number20
Publication statusPublished - 2010

Keywords

  • METIS-269092

Cite this

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title = "Role of topographical defects in organic film growth of 4,4'-biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study",
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author = "F.S. Khokhar and {van Gastel}, Raoul and Bene Poelsema",
year = "2010",
language = "English",
volume = "82",
pages = "205409--",
journal = "Physical review B: Condensed matter and materials physics",
issn = "1098-0121",
publisher = "American Physical Society",
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}

Role of topographical defects in organic film growth of 4,4'-biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study. / Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene.

In: Physical review B: Condensed matter and materials physics, Vol. 82, No. 20, 2010, p. 205409-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Role of topographical defects in organic film growth of 4,4'-biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study

AU - Khokhar, F.S.

AU - van Gastel, Raoul

AU - Poelsema, Bene

PY - 2010

Y1 - 2010

KW - METIS-269092

M3 - Article

VL - 82

SP - 205409-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 20

ER -