Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

C. Grivas, D.P. Shepherd, R.W. Eason, L. Laversenne, P. Moretti, C.N. Borca, Markus Pollnau

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    Abstract

    Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near 780 nm was demonstrated at room temperature at an absorbed pump power threshold of 230 mW. Single-transverse-mode- laser emission was observed with measured beam propagation factors $M^{2}_{x}$ and $M^{2}_{y}$ of 1.5 and 1.2, respectively. An output power of 12.4 mW for 1 W pump power was obtained with an output coupler of 4.6% transmission at the signal wavelength. Higher output powers were measured in waveguides with larger cross sections exhibiting multimode laser emission.
    Original languageUndefined
    Pages (from-to)3450-3452
    Number of pages3
    JournalOptics letters
    Volume31
    Issue number06EX1521/23
    DOIs
    Publication statusPublished - 1 Dec 2006

    Keywords

    • EWI-8041
    • IR-66575
    • METIS-237568
    • IOMS-APD: Advanced Photonic Devices

    Cite this

    Grivas, C., Shepherd, D. P., Eason, R. W., Laversenne, L., Moretti, P., Borca, C. N., & Pollnau, M. (2006). Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation. Optics letters, 31(06EX1521/23), 3450-3452. https://doi.org/10.1364/OL.31.003450