Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition

Junia S. Solomon*, Tatiana Soto-Montero, Yorick A. Birkhölzer, Daniel M. Cunha, Wiria Soltanpoor, Martin Ledinský, Nikolai Orlov, Erik C. Garnett, Nicolás Forero-Correa, Sebastian E. Reyes-Lillo, Thomas B. Haward, Joshua R.S. Lilly, Laura M. Herz, Gertjan Koster, Guus Rijnders, Linn Leppert, Monica Morales-Masis*

*Corresponding author for this work

Research output: Working paperPreprintAcademic

1 Citation (Scopus)

Abstract

Epitaxial growth on lattice-(mis)matched substrates has advanced the understanding of semiconductors and enabled high-end technologies such as III-V-based light-emitting diodes. However, for metal halide perovskites, there is a knowledge gap in thin film heteroepitaxial growth, hindering progress towards new applications. Here we demonstrate the epitaxial growth of cubic (α)-CH3NH3PbI3 films on lattice-matched KCl substrates by pulsed laser deposition at room temperature. Epitaxial stabilization of α-CH3NH3PbI3 is confirmed via reciprocal space mapping, X-ray diffraction pole figures, electron backscatter diffraction and photoluminescence. A bandgap of 1.66 eV stable for over 300 days and Urbach energies of 12.3 meV for 15-nm-thick films are demonstrated. The impact of strain on α-phase stabilization is corroborated by first-principles density functional theory calculations, which also predict substantial bandgap tunability. This work demonstrates the potential of pulsed laser deposition for vapour-phase heteroepitaxial growth of metal halide perovskites, inspiring studies to unlock novel functionalities. (Figure presented.)

Original languageEnglish
PublisherResearch Square Publications
DOIs
Publication statusE-pub ahead of print/First online - 19 Dec 2023

Keywords

  • NLA

Fingerprint

Dive into the research topics of 'Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition'. Together they form a unique fingerprint.

Cite this