TY - UNPB
T1 - Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition
AU - Solomon, Junia S.
AU - Soto-Montero, Tatiana
AU - Birkhölzer, Yorick A.
AU - Cunha, Daniel M.
AU - Soltanpoor, Wiria
AU - Ledinský, Martin
AU - Orlov, Nikolai
AU - Garnett, Erik C.
AU - Forero-Correa, Nicolás
AU - Reyes-Lillo, Sebastian E.
AU - Haward, Thomas B.
AU - Lilly, Joshua R.S.
AU - Herz, Laura M.
AU - Koster, Gertjan
AU - Rijnders, Guus
AU - Leppert, Linn
AU - Morales-Masis, Monica
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer Nature Limited 2025.
PY - 2023/12/19
Y1 - 2023/12/19
N2 - Epitaxial growth on lattice-(mis)matched substrates has advanced the understanding of semiconductors and enabled high-end technologies such as III-V-based light-emitting diodes. However, for metal halide perovskites, there is a knowledge gap in thin film heteroepitaxial growth, hindering progress towards new applications. Here we demonstrate the epitaxial growth of cubic (α)-CH3NH3PbI3 films on lattice-matched KCl substrates by pulsed laser deposition at room temperature. Epitaxial stabilization of α-CH3NH3PbI3 is confirmed via reciprocal space mapping, X-ray diffraction pole figures, electron backscatter diffraction and photoluminescence. A bandgap of 1.66 eV stable for over 300 days and Urbach energies of 12.3 meV for 15-nm-thick films are demonstrated. The impact of strain on α-phase stabilization is corroborated by first-principles density functional theory calculations, which also predict substantial bandgap tunability. This work demonstrates the potential of pulsed laser deposition for vapour-phase heteroepitaxial growth of metal halide perovskites, inspiring studies to unlock novel functionalities. (Figure presented.)
AB - Epitaxial growth on lattice-(mis)matched substrates has advanced the understanding of semiconductors and enabled high-end technologies such as III-V-based light-emitting diodes. However, for metal halide perovskites, there is a knowledge gap in thin film heteroepitaxial growth, hindering progress towards new applications. Here we demonstrate the epitaxial growth of cubic (α)-CH3NH3PbI3 films on lattice-matched KCl substrates by pulsed laser deposition at room temperature. Epitaxial stabilization of α-CH3NH3PbI3 is confirmed via reciprocal space mapping, X-ray diffraction pole figures, electron backscatter diffraction and photoluminescence. A bandgap of 1.66 eV stable for over 300 days and Urbach energies of 12.3 meV for 15-nm-thick films are demonstrated. The impact of strain on α-phase stabilization is corroborated by first-principles density functional theory calculations, which also predict substantial bandgap tunability. This work demonstrates the potential of pulsed laser deposition for vapour-phase heteroepitaxial growth of metal halide perovskites, inspiring studies to unlock novel functionalities. (Figure presented.)
KW - NLA
UR - http://www.scopus.com/inward/record.url?scp=85217163549&partnerID=8YFLogxK
U2 - 10.21203/rs.3.rs-3730125/v1
DO - 10.21203/rs.3.rs-3730125/v1
M3 - Preprint
AN - SCOPUS:85217163549
BT - Room-temperature epitaxy of α-CH3NH3PbI3 halide perovskite by pulsed laser deposition
PB - Research Square Publications
ER -