Room Temperature SiO2 Films Deposited by Multipolar ECR PECVD

I.G. Isai; A.Y. Kovalgin; J. Holleman; P.H. Woerlee; H. Wallinga

doi:10.1051/jp4:2001394

Room Temperature SiO₂ Films Deposited by Multipolar ECR PECVD

I.G. Isai, A.Y. Kovalgin, J. Holleman, P.H. Woerlee, H. Wallinga

Research output: Contribution to journal › Conference article › Academic › peer-review

Abstract

The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.

Original language	English
Pages (from-to)	747-753
Journal	Journal de physique IV
Volume	11
Issue number	Pr3
DOIs	https://doi.org/10.1051/jp4:2001394
Publication status	Published - 2001
Event	13th European Conference on Chemical Vapor Deposition 2001 - Athens, Greece Duration: 26 Aug 2001 → 31 Aug 2001

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10.1051/jp4:2001394

1 Poster

Room Temperature SiO₂ films by Multipolar ECR PECVD
Isai, I. G., Kovalgin, A. Y., Holleman, J., Woerlee, P. H. & Wallinga, H., 2001.
Research output: Contribution to conference › Poster › Academic

Cite this

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title = "Room Temperature SiO2 Films Deposited by Multipolar ECR PECVD",

abstract = "The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.",

author = "I.G. Isai and A.Y. Kovalgin and J. Holleman and P.H. Woerlee and H. Wallinga",

year = "2001",

doi = "10.1051/jp4:2001394",

language = "English",

volume = "11",

pages = "747--753",

journal = "The European physical journal. Special topics",

issn = "1951-6355",

publisher = "EDP Sciences",

number = "Pr3",

note = "13th European Conference on Chemical Vapor Deposition 2001 ; Conference date: 26-08-2001 Through 31-08-2001",

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TY - JOUR

T1 - Room Temperature SiO2 Films Deposited by Multipolar ECR PECVD

AU - Isai, I.G.

AU - Kovalgin, A.Y.

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wallinga, H.

PY - 2001

Y1 - 2001

N2 - The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.

AB - The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.

U2 - 10.1051/jp4:2001394

DO - 10.1051/jp4:2001394

M3 - Conference article

VL - 11

SP - 747

EP - 753

JO - The European physical journal. Special topics

JF - The European physical journal. Special topics

SN - 1951-6355

IS - Pr3

T2 - 13th European Conference on Chemical Vapor Deposition 2001

Y2 - 26 August 2001 through 31 August 2001

ER -

Room Temperature SiO2 Films Deposited by Multipolar ECR PECVD

Abstract

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Research output

Room Temperature SiO2 films by Multipolar ECR PECVD

Cite this

Room Temperature SiO₂ Films Deposited by Multipolar ECR PECVD

Room Temperature SiO₂ films by Multipolar ECR PECVD