Room Temperature SiO2 Films Deposited by Multipolar ECR PECVD

I.G. Isai, A.Y. Kovalgin, J. Holleman, P.H. Woerlee, H. Wallinga

    Research output: Contribution to journalConference articleAcademicpeer-review

    Abstract

    The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.
    Original languageEnglish
    Pages (from-to)747-753
    JournalJournal de physique IV
    Volume11
    Issue numberPr3
    DOIs
    Publication statusPublished - 2001
    Event13th European Conference on Chemical Vapor Deposition 2001 - Athens, Greece
    Duration: 26 Aug 200131 Aug 2001

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