The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO2 films with interface charge in the order of 1011 ions/cm2, critical field of 6 MV/cm and refiactive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO2 layers was explained in terms of film structure and deposition parameters.
|Journal||Journal de physique IV|
|Publication status||Published - 2001|
|Event||13th European Conference on Chemical Vapor Deposition 2001 - Athens, Greece|
Duration: 26 Aug 2001 → 31 Aug 2001