Room-temperature spintronic effects in Alq3-based hybrid devices

V. Dediu, L.E. Hueso, I Bergenti, A. Riminucci, F. Borgatti, P. Graziosi, C. Newby, F. Casoli, Machiel Pieter de Jong, C. Taliani, Y. Zhan

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Abstract

We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the “soft��? organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50–100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport
Original languageUndefined
Pages (from-to)115203
Number of pages6
JournalPhysical review B: Condensed matter and materials physics
Volume78
Issue number10
DOIs
Publication statusPublished - 17 Sep 2008

Keywords

  • EWI-14021
  • METIS-252094
  • IR-59899
  • SMI-NE: From 2006 in EWI-NE

Cite this

Dediu, V., Hueso, L. E., Bergenti, I., Riminucci, A., Borgatti, F., Graziosi, P., ... Zhan, Y. (2008). Room-temperature spintronic effects in Alq3-based hybrid devices. Physical review B: Condensed matter and materials physics, 78(10), 115203. https://doi.org/10.1103/PhysRevB.78.115203
Dediu, V. ; Hueso, L.E. ; Bergenti, I ; Riminucci, A. ; Borgatti, F. ; Graziosi, P. ; Newby, C. ; Casoli, F. ; de Jong, Machiel Pieter ; Taliani, C. ; Zhan, Y. / Room-temperature spintronic effects in Alq3-based hybrid devices. In: Physical review B: Condensed matter and materials physics. 2008 ; Vol. 78, No. 10. pp. 115203.
@article{ae626ce366414d85b335d1e6079c884a,
title = "Room-temperature spintronic effects in Alq3-based hybrid devices",
abstract = "We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the “soft��? organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50–100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport",
keywords = "EWI-14021, METIS-252094, IR-59899, SMI-NE: From 2006 in EWI-NE",
author = "V. Dediu and L.E. Hueso and I Bergenti and A. Riminucci and F. Borgatti and P. Graziosi and C. Newby and F. Casoli and {de Jong}, {Machiel Pieter} and C. Taliani and Y. Zhan",
note = "10.1103/PhysRevB.78.115203",
year = "2008",
month = "9",
day = "17",
doi = "10.1103/PhysRevB.78.115203",
language = "Undefined",
volume = "78",
pages = "115203",
journal = "Physical review B: Condensed matter and materials physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "10",

}

Dediu, V, Hueso, LE, Bergenti, I, Riminucci, A, Borgatti, F, Graziosi, P, Newby, C, Casoli, F, de Jong, MP, Taliani, C & Zhan, Y 2008, 'Room-temperature spintronic effects in Alq3-based hybrid devices' Physical review B: Condensed matter and materials physics, vol. 78, no. 10, pp. 115203. https://doi.org/10.1103/PhysRevB.78.115203

Room-temperature spintronic effects in Alq3-based hybrid devices. / Dediu, V.; Hueso, L.E.; Bergenti, I; Riminucci, A.; Borgatti, F.; Graziosi, P.; Newby, C.; Casoli, F.; de Jong, Machiel Pieter; Taliani, C.; Zhan, Y.

In: Physical review B: Condensed matter and materials physics, Vol. 78, No. 10, 17.09.2008, p. 115203.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Room-temperature spintronic effects in Alq3-based hybrid devices

AU - Dediu, V.

AU - Hueso, L.E.

AU - Bergenti, I

AU - Riminucci, A.

AU - Borgatti, F.

AU - Graziosi, P.

AU - Newby, C.

AU - Casoli, F.

AU - de Jong, Machiel Pieter

AU - Taliani, C.

AU - Zhan, Y.

N1 - 10.1103/PhysRevB.78.115203

PY - 2008/9/17

Y1 - 2008/9/17

N2 - We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the “soft��? organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50–100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport

AB - We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the “soft��? organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50–100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport

KW - EWI-14021

KW - METIS-252094

KW - IR-59899

KW - SMI-NE: From 2006 in EWI-NE

U2 - 10.1103/PhysRevB.78.115203

DO - 10.1103/PhysRevB.78.115203

M3 - Article

VL - 78

SP - 115203

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 10

ER -