Room temperature deposition of single and multiple layers of silicon and molybdenum has been explored by scanning tunneling microscopy at growth conditions used for Mo/Si multilayer optics. Periodic Mo/Si multilayer films with a molybdenum layer thickness of 2.5 nm and a silicon layer thickness of 5 nm show an evolution of the surface roughness that is similar to polycrystalline film self-affine growth. By applying ion beam treatment to the silicon layers this increase of the roughness with layer thickness is completely compensated, yielding a final roughness similar to the first ion treated silicon layer. The ion treatment step used here is most efficient in reducing surface roughness with lateral sizes between 5-10 nm
|Publication status||Published - 17 Jan 2012|
|Event||Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands|
Duration: 17 Jan 2012 → 18 Jan 2012
|Conference||Physics@FOM Veldhoven 2012|
|Period||17/01/12 → 18/01/12|
Zoethout, E., Louis, E., & Bijkerk, F. (2012). Roughness development during growth and ion beam polishing of molybdenum silicon mulitlayer films. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.