Roughness development during growth and ion beam polishing of molybdenum silicon mulitlayer films

Research output: Contribution to conferencePosterOther research output

Abstract

Room temperature deposition of single and multiple layers of silicon and molybdenum has been explored by scanning tunneling microscopy at growth conditions used for Mo/Si multilayer optics. Periodic Mo/Si multilayer films with a molybdenum layer thickness of 2.5 nm and a silicon layer thickness of 5 nm show an evolution of the surface roughness that is similar to polycrystalline film self-affine growth. By applying ion beam treatment to the silicon layers this increase of the roughness with layer thickness is completely compensated, yielding a final roughness similar to the first ion treated silicon layer. The ion treatment step used here is most efficient in reducing surface roughness with lateral sizes between 5-10 nm
Original languageEnglish
Pages-
Publication statusPublished - 17 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012

Conference

ConferencePhysics@FOM Veldhoven 2012
CountryNetherlands
CityVeldhoven
Period17/01/1218/01/12

Keywords

  • METIS-298905

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