Roughness development during growth and ion beam polishing of molybdenum silicon mulitlayer films

Research output: Contribution to conferencePoster

Abstract

Room temperature deposition of single and multiple layers of silicon and molybdenum has been explored by scanning tunneling microscopy at growth conditions used for Mo/Si multilayer optics. Periodic Mo/Si multilayer films with a molybdenum layer thickness of 2.5 nm and a silicon layer thickness of 5 nm show an evolution of the surface roughness that is similar to polycrystalline film self-affine growth. By applying ion beam treatment to the silicon layers this increase of the roughness with layer thickness is completely compensated, yielding a final roughness similar to the first ion treated silicon layer. The ion treatment step used here is most efficient in reducing surface roughness with lateral sizes between 5-10 nm
Original languageEnglish
Pages-
Publication statusPublished - 17 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012

Conference

ConferencePhysics@FOM Veldhoven 2012
CountryNetherlands
CityVeldhoven
Period17/01/1218/01/12

Keywords

  • METIS-298905

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    Zoethout, E., Louis, E., & Bijkerk, F. (2012). Roughness development during growth and ion beam polishing of molybdenum silicon mulitlayer films. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.