Abstract
Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.
| Original language | English |
|---|---|
| Pages (from-to) | 3458-3469 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 71 |
| Issue number | 6 |
| Early online date | 6 May 2024 |
| DOIs | |
| Publication status | Published - Jun 2024 |
Keywords
- 2024 OA procedure
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