Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review

R. Tambone, A. Ferrara, R. Siemieniec, A. Wood, F. Magrini, R. J. E. Hueting

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Power metal-oxide-semiconductor field-effect transistors (MOSFETs) play a vital role in numerous everyday applications that require an extended lifetime. Therefore, it is important to understand and, if possible, to avoid the related failure mechanisms occurring during operation of the power MOSFETs. In this work, the ruggedness of power MOSFETs has extensively been reviewed considering the underlying physics of the cell structure. Different measurement setups used to investigate the failure mechanisms are discussed, as well as the interactions between failure modes. Finally, guidelines to prevent failure are provided.

Original languageEnglish
Pages (from-to)3445-3457
Number of pages13
JournalIEEE Transactions on Electron Devices
Volume71
Issue number6
Early online date6 May 2024
DOIs
Publication statusPublished - Jun 2024

Keywords

  • 2024 OA procedure

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