Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review

R. Tambone, A. Ferrara, R. Siemieniec, A. Wood, F. Magrini, R. J. E. Hueting

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.

Original languageEnglish
Pages (from-to)3458-3469
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume71
Issue number6
Early online date6 May 2024
DOIs
Publication statusPublished - Jun 2024

Keywords

  • 2024 OA procedure

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