TY - JOUR
T1 - Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review
AU - Tambone, R.
AU - Ferrara, A.
AU - Siemieniec, R.
AU - Wood, A.
AU - Magrini, F.
AU - Hueting, R. J. E.
PY - 2024/6
Y1 - 2024/6
N2 - Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.
AB - Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.
KW - 2024 OA procedure
UR - https://doi.org/10.1109/TED.2024.3394463
U2 - 10.1109/TED.2024.3394463
DO - 10.1109/TED.2024.3394463
M3 - Article
SN - 0018-9383
VL - 71
SP - 3458
EP - 3469
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -