S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

M van Heijningen; G.C. Visser; J. Wurfl; Frank Edward van Vliet

doi:10.1109/EMICC.2008.4772233

S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

M van Heijningen, G.C. Visser, J. Wurfl, Frank Edward van Vliet

Research output: Contribution to conference › Paper › peer-review

11 Citations (Scopus)

5 Downloads (Pure)

Abstract

Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.

Original language	Undefined
Pages	79-82
Number of pages	4
DOIs	https://doi.org/10.1109/EMICC.2008.4772233
Publication status	Published - 27 Oct 2008
Event	3rd European Microwave Integrated Circuits Conference, EuMIC 2008 - Amsterdam, Netherlands Duration: 27 Oct 2008 → 28 Oct 2008 Conference number: 3

Conference

Conference	3rd European Microwave Integrated Circuits Conference, EuMIC 2008
Abbreviated title	EuMIC
Country/Territory	Netherlands
City	Amsterdam
Period	27/10/08 → 28/10/08

Keywords

EWI-20042
IR-76722

Access to Document

10.1109/EMICC.2008.4772233

http://eprints.eemcs.utwente.nl/secure2/20042/01/EuMIC2008_S-Band.pdf

Cite this

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title = "S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power",

abstract = "Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.",

keywords = "EWI-20042, IR-76722",

author = "{van Heijningen}, M and G.C. Visser and J. Wurfl and {van Vliet}, {Frank Edward}",

year = "2008",

month = oct,

day = "27",

doi = "10.1109/EMICC.2008.4772233",

language = "Undefined",

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note = "3rd European Microwave Integrated Circuits Conference, EuMIC 2008 ; Conference date: 27-10-2008 Through 28-10-2008",

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TY - CONF

T1 - S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

AU - van Heijningen, M

AU - Visser, G.C.

AU - Wurfl, J.

AU - van Vliet, Frank Edward

N1 - Conference code: 3

PY - 2008/10/27

Y1 - 2008/10/27

N2 - Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.

AB - Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.

KW - EWI-20042

KW - IR-76722

U2 - 10.1109/EMICC.2008.4772233

DO - 10.1109/EMICC.2008.4772233

M3 - Paper

SP - 79

EP - 82

T2 - 3rd European Microwave Integrated Circuits Conference, EuMIC 2008

Y2 - 27 October 2008 through 28 October 2008

ER -