Sacrificial wafer bonding for planarization after very deep etching

V.L. Spiering, Johan W. Berenschot, Michael Curt Elwenspoek, J.H.J. Fluitman

Research output: Contribution to journalArticleAcademicpeer-review

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43 Downloads (Pure)

Abstract

A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 mu m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon.
Original languageEnglish
Pages (from-to)151-157
JournalJournal of microelectromechanical systems
Volume4
Issue number3
DOIs
Publication statusPublished - 1995

Fingerprint

Wafer bonding
Metal foil
Aluminum bridges
Etching
Silicon
Fabrication
Thin films

Keywords

  • METIS-128999
  • IR-24199

Cite this

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title = "Sacrificial wafer bonding for planarization after very deep etching",
abstract = "A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 mu m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon.",
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author = "V.L. Spiering and Berenschot, {Johan W.} and Elwenspoek, {Michael Curt} and J.H.J. Fluitman",
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journal = "Journal of microelectromechanical systems",
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Sacrificial wafer bonding for planarization after very deep etching. / Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

In: Journal of microelectromechanical systems, Vol. 4, No. 3, 1995, p. 151-157.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Sacrificial wafer bonding for planarization after very deep etching

AU - Spiering, V.L.

AU - Berenschot, Johan W.

AU - Elwenspoek, Michael Curt

AU - Fluitman, J.H.J.

PY - 1995

Y1 - 1995

N2 - A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 mu m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon.

AB - A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 mu m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon.

KW - METIS-128999

KW - IR-24199

U2 - 10.1109/84.465120

DO - 10.1109/84.465120

M3 - Article

VL - 4

SP - 151

EP - 157

JO - Journal of microelectromechanical systems

JF - Journal of microelectromechanical systems

SN - 1057-7157

IS - 3

ER -