Sapphire and other dielectric waveguide devices

Markus Pollnau

doi:10.1109/LEOS.2008.4688687

Sapphire and other dielectric waveguide devices

Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

204 Downloads (Pure)

Abstract

Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in order to obtain ultra-low-threshold waveguide lasers and to explore their full potential as light sources in various applications in integrated optics.

Original language	Undefined
Title of host publication	2008 IEEE LEOS Annual Meeting
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	455-456
Number of pages	2
ISBN (Print)	978-1-4244-1931-9
DOIs	https://doi.org/10.1109/LEOS.2008.4688687
Publication status	Published - Nov 2008
Event	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS) 2008 - Newport Beach, United States Duration: 9 Nov 2008 → 13 Nov 2008 Conference number: 16

Conference

Conference	21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS) 2008
Country/Territory	United States
City	Newport Beach
Period	9/11/08 → 13/11/08

Keywords

IR-70144
IOMS-APD: Active Photonic Devices
Integrated Optics
light sources
buried channel waveguide laser
Ti:sapphire laser
Optical fabrication
first-generation waveguides
fabrication methods
optical losses
optical waveguide components
Sapphire
waveguide lasers
propagation losses
solid lasers
EWI-17540
dielectric waveguide devices
METIS-265826

Access to Document

10.1109/LEOS.2008.4688687

IEEE_LEOS_Annual_Meeting_2008_Pollnau_Published_Version

http://eprints.eemcs.utwente.nl/secure2/17540/01/IEEE_LEOS_Annual_Meeting_2008_Pollnau_Published_Version.pdf

Cite this

@inproceedings{c19218a00b1c426498742a4ccbb45291,

title = "Sapphire and other dielectric waveguide devices",

abstract = "Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in order to obtain ultra-low-threshold waveguide lasers and to explore their full potential as light sources in various applications in integrated optics.",

keywords = "IR-70144, IOMS-APD: Active Photonic Devices, Integrated Optics, light sources, buried channel waveguide laser, Ti:sapphire laser, Optical fabrication, first-generation waveguides, fabrication methods, optical losses, optical waveguide components, Sapphire, waveguide lasers, propagation losses, solid lasers, EWI-17540, dielectric waveguide devices, METIS-265826",

author = "Markus Pollnau",

year = "2008",

month = nov,

doi = "10.1109/LEOS.2008.4688687",

language = "Undefined",

isbn = "978-1-4244-1931-9",

pages = "455--456",

booktitle = "2008 IEEE LEOS Annual Meeting",

publisher = "IEEE",

address = "United States",

note = "21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS) 2008 ; Conference date: 09-11-2008 Through 13-11-2008",

}

TY - GEN

T1 - Sapphire and other dielectric waveguide devices

AU - Pollnau, Markus

N1 - Conference code: 16

PY - 2008/11

Y1 - 2008/11

N2 - Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in order to obtain ultra-low-threshold waveguide lasers and to explore their full potential as light sources in various applications in integrated optics.

AB - Different fabrication methods have been explored successfully and surface and buried channel waveguide lasers have been demonstrated in Ti:sapphire for the first time. Since the propagation losses of these first-generation waveguides are still rather high, substantial improvement is required in order to obtain ultra-low-threshold waveguide lasers and to explore their full potential as light sources in various applications in integrated optics.

KW - IR-70144

KW - IOMS-APD: Active Photonic Devices

KW - Integrated Optics

KW - light sources

KW - buried channel waveguide laser

KW - Ti:sapphire laser

KW - Optical fabrication

KW - first-generation waveguides

KW - fabrication methods

KW - optical losses

KW - optical waveguide components

KW - Sapphire

KW - waveguide lasers

KW - propagation losses

KW - solid lasers

KW - EWI-17540

KW - dielectric waveguide devices

KW - METIS-265826

U2 - 10.1109/LEOS.2008.4688687

DO - 10.1109/LEOS.2008.4688687

M3 - Conference contribution

SN - 978-1-4244-1931-9

SP - 455

EP - 456

BT - 2008 IEEE LEOS Annual Meeting

PB - IEEE

CY - Piscataway, NJ

T2 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS) 2008

Y2 - 9 November 2008 through 13 November 2008

ER -