TY - JOUR
T1 - Scalable Pulsed Laser Deposition of Transparent Rear Electrode for Perovskite Solar Cells
AU - Smirnov, Yury
AU - Schmengler, Laura
AU - Kuik, Riemer
AU - Repecaud, Pierre Alexis
AU - Najafi, Mehrdad
AU - Zhang, Dong
AU - Theelen, Mirjam
AU - Aydin, Erkan
AU - Veenstra, Sjoerd
AU - De Wolf, Stefaan
AU - Morales-Masis, Monica
N1 - Wiley deal
PY - 2021/2
Y1 - 2021/2
N2 - Sputtered transparent conducting oxides (TCOs) are widely accepted transparent electrodes for several types of high-efficiency solar cells. However, the different sputtering yield of atoms makes stoichiometric transfer of target material challenging for multi-compounds. Additionally, the high kinetic energies of the arriving species may damage sensitive functional layers beneath. Conversely, pulsed laser deposition (PLD) is operated at higher deposition pressures promoting thermalization of particles. This leads to stoichiometric transfer and additionally reduces the kinetic energy of ablated species. Despite these advantages, PLD is rarely used within the photovoltaic community due to concerns about low deposition rates and the scalability of the technique. In this study, wafer-scale (4-inch) PLD of high-mobility Zr-doped In2O3 (IZrO) TCO for solar cells is demonstrated. IZrO films are grown at room temperature with deposition rate on par with RF-sputtering (>4 nm min−1). As-deposited IZrO films are mostly amorphous and exhibit excellent optoelectronic properties after solid phase crystallization at <200 °C. 100-nm thick films feature a sheet resistance of 21 Ω◻−1 with electron mobilities ≈70 cm2 V−1s−1. PLD-grown IZrO is applied as rear electrode in efficient semi-transparent halide perovskite solar cells leading to the improved stabilized maximum power point efficiency (15.1%) as compared to the cells with sputtered ITO electrodes (11.9%).
AB - Sputtered transparent conducting oxides (TCOs) are widely accepted transparent electrodes for several types of high-efficiency solar cells. However, the different sputtering yield of atoms makes stoichiometric transfer of target material challenging for multi-compounds. Additionally, the high kinetic energies of the arriving species may damage sensitive functional layers beneath. Conversely, pulsed laser deposition (PLD) is operated at higher deposition pressures promoting thermalization of particles. This leads to stoichiometric transfer and additionally reduces the kinetic energy of ablated species. Despite these advantages, PLD is rarely used within the photovoltaic community due to concerns about low deposition rates and the scalability of the technique. In this study, wafer-scale (4-inch) PLD of high-mobility Zr-doped In2O3 (IZrO) TCO for solar cells is demonstrated. IZrO films are grown at room temperature with deposition rate on par with RF-sputtering (>4 nm min−1). As-deposited IZrO films are mostly amorphous and exhibit excellent optoelectronic properties after solid phase crystallization at <200 °C. 100-nm thick films feature a sheet resistance of 21 Ω◻−1 with electron mobilities ≈70 cm2 V−1s−1. PLD-grown IZrO is applied as rear electrode in efficient semi-transparent halide perovskite solar cells leading to the improved stabilized maximum power point efficiency (15.1%) as compared to the cells with sputtered ITO electrodes (11.9%).
KW - UT-Hybrid-D
KW - perovskite solar cells
KW - pulsed laser deposition
KW - transparent conducting oxides
UR - http://www.scopus.com/inward/record.url?scp=85099262093&partnerID=8YFLogxK
U2 - 10.1002/admt.202000856
DO - 10.1002/admt.202000856
M3 - Article
AN - SCOPUS:85099262093
SN - 2365-709X
VL - 6
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 2
M1 - 2000856
ER -