Scaling properties of doped Sb2Te phase change line cells

F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D. Tio Castro, G.A.M. Hurkx, R. Delhounge, D.J. Gravesteijn, Dirk J Gravesteijn, K. Attenborough

    Research output: Contribution to conferencePaper

    3 Citations (Scopus)

    Abstract

    For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.
    Original languageUndefined
    Pages43-45
    Number of pages3
    DOIs
    Publication statusPublished - 18 May 2008

    Keywords

    • IR-76693
    • phase change memories
    • EWI-20007
    • line cell
    • chalgogenide materials
    • PCRAM
    • Scaling

    Cite this

    Jedema, F. J., in ‘t Zandt, M. A. A., Wolters, R. A. M., Tio Castro, D., Hurkx, G. A. M., Delhounge, R., ... Attenborough, K. (2008). Scaling properties of doped Sb2Te phase change line cells. 43-45. https://doi.org/10.1109/NVSMW.2008.18
    Jedema, F.J. ; in ‘t Zandt, M.A.A. ; Wolters, Robertus A.M. ; Tio Castro, D. ; Hurkx, G.A.M. ; Delhounge, R. ; Gravesteijn, D.J. ; Gravesteijn, Dirk J ; Attenborough, K. / Scaling properties of doped Sb2Te phase change line cells. 3 p.
    @conference{16895def4c1d4559a213f94b7a26606e,
    title = "Scaling properties of doped Sb2Te phase change line cells",
    abstract = "For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.",
    keywords = "IR-76693, phase change memories, EWI-20007, line cell, chalgogenide materials, PCRAM, Scaling",
    author = "F.J. Jedema and {in ‘t Zandt}, M.A.A. and Wolters, {Robertus A.M.} and {Tio Castro}, D. and G.A.M. Hurkx and R. Delhounge and D.J. Gravesteijn and Gravesteijn, {Dirk J} and K. Attenborough",
    year = "2008",
    month = "5",
    day = "18",
    doi = "10.1109/NVSMW.2008.18",
    language = "Undefined",
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    Jedema, FJ, in ‘t Zandt, MAA, Wolters, RAM, Tio Castro, D, Hurkx, GAM, Delhounge, R, Gravesteijn, DJ, Gravesteijn, DJ & Attenborough, K 2008, 'Scaling properties of doped Sb2Te phase change line cells' pp. 43-45. https://doi.org/10.1109/NVSMW.2008.18

    Scaling properties of doped Sb2Te phase change line cells. / Jedema, F.J.; in ‘t Zandt, M.A.A.; Wolters, Robertus A.M.; Tio Castro, D.; Hurkx, G.A.M.; Delhounge, R.; Gravesteijn, D.J.; Gravesteijn, Dirk J; Attenborough, K.

    2008. 43-45.

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - Scaling properties of doped Sb2Te phase change line cells

    AU - Jedema, F.J.

    AU - in ‘t Zandt, M.A.A.

    AU - Wolters, Robertus A.M.

    AU - Tio Castro, D.

    AU - Hurkx, G.A.M.

    AU - Delhounge, R.

    AU - Gravesteijn, D.J.

    AU - Gravesteijn, Dirk J

    AU - Attenborough, K.

    PY - 2008/5/18

    Y1 - 2008/5/18

    N2 - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

    AB - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

    KW - IR-76693

    KW - phase change memories

    KW - EWI-20007

    KW - line cell

    KW - chalgogenide materials

    KW - PCRAM

    KW - Scaling

    U2 - 10.1109/NVSMW.2008.18

    DO - 10.1109/NVSMW.2008.18

    M3 - Paper

    SP - 43

    EP - 45

    ER -

    Jedema FJ, in ‘t Zandt MAA, Wolters RAM, Tio Castro D, Hurkx GAM, Delhounge R et al. Scaling properties of doped Sb2Te phase change line cells. 2008. https://doi.org/10.1109/NVSMW.2008.18