Scaling properties of doped Sb2Te phase change line cells

F.J. Jedema; M.A.A. in ‘t Zandt; Robertus A.M. Wolters; D. Tio Castro; G.A.M. Hurkx; R. Delhounge; D.J. Gravesteijn; Dirk J Gravesteijn; K. Attenborough

doi:10.1109/NVSMW.2008.18

Scaling properties of doped Sb₂Te phase change line cells

F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D. Tio Castro, G.A.M. Hurkx, R. Delhounge, D.J. Gravesteijn, Dirk J Gravesteijn, K. Attenborough

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

Original language	Undefined
Pages	43-45
Number of pages	3
DOIs	https://doi.org/10.1109/NVSMW.2008.18
Publication status	Published - 18 May 2008
Event	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD - Ogura, Taku Duration: 18 May 2008 → 18 May 2008

Conference

Conference	2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD
Period	18/05/08 → 18/05/08

Keywords

IR-76693
phase change memories
EWI-20007
line cell
chalgogenide materials
PCRAM
Scaling

Access to Document

10.1109/NVSMW.2008.18

http://eprints.eemcs.utwente.nl/secure2/20007/01/jedema.pdf

Cite this

Jedema, F. J., in ‘t Zandt, M. A. A., Wolters, R. A. M., Tio Castro, D., Hurkx, G. A. M., Delhounge, R., Gravesteijn, D. J., Gravesteijn, D. J., & Attenborough, K. (2008). Scaling properties of doped Sb₂Te phase change line cells. 43-45. Paper presented at 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, . https://doi.org/10.1109/NVSMW.2008.18

Jedema, F.J. ; in ‘t Zandt, M.A.A. ; Wolters, Robertus A.M. ; Tio Castro, D. ; Hurkx, G.A.M. ; Delhounge, R. ; Gravesteijn, D.J. ; Gravesteijn, Dirk J ; Attenborough, K. / Scaling properties of doped Sb₂Te phase change line cells. Paper presented at 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, .3 p.

@conference{16895def4c1d4559a213f94b7a26606e,

title = "Scaling properties of doped Sb2Te phase change line cells",

abstract = "For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.",

keywords = "IR-76693, phase change memories, EWI-20007, line cell, chalgogenide materials, PCRAM, Scaling",

author = "F.J. Jedema and {in {\textquoteleft}t Zandt}, M.A.A. and Wolters, {Robertus A.M.} and {Tio Castro}, D. and G.A.M. Hurkx and R. Delhounge and D.J. Gravesteijn and Gravesteijn, {Dirk J} and K. Attenborough",

year = "2008",

month = may,

day = "18",

doi = "10.1109/NVSMW.2008.18",

language = "Undefined",

pages = "43--45",

note = "null ; Conference date: 18-05-2008 Through 18-05-2008",

}

Jedema, FJ, in ‘t Zandt, MAA, Wolters, RAM, Tio Castro, D, Hurkx, GAM, Delhounge, R, Gravesteijn, DJ, Gravesteijn, DJ & Attenborough, K 2008, 'Scaling properties of doped Sb₂Te phase change line cells', Paper presented at 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, 18/05/08 - 18/05/08 pp. 43-45. https://doi.org/10.1109/NVSMW.2008.18

Scaling properties of doped Sb₂Te phase change line cells. / Jedema, F.J.; in ‘t Zandt, M.A.A.; Wolters, Robertus A.M.; Tio Castro, D.; Hurkx, G.A.M.; Delhounge, R.; Gravesteijn, D.J.; Gravesteijn, Dirk J; Attenborough, K.

2008. 43-45 Paper presented at 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Scaling properties of doped Sb2Te phase change line cells

AU - Jedema, F.J.

AU - in ‘t Zandt, M.A.A.

AU - Wolters, Robertus A.M.

AU - Tio Castro, D.

AU - Hurkx, G.A.M.

AU - Delhounge, R.

AU - Gravesteijn, D.J.

AU - Gravesteijn, Dirk J

AU - Attenborough, K.

PY - 2008/5/18

Y1 - 2008/5/18

N2 - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

AB - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

KW - IR-76693

KW - phase change memories

KW - EWI-20007

KW - line cell

KW - chalgogenide materials

KW - PCRAM

KW - Scaling

U2 - 10.1109/NVSMW.2008.18

DO - 10.1109/NVSMW.2008.18

M3 - Paper

SP - 43

EP - 45

Y2 - 18 May 2008 through 18 May 2008

ER -