Scaling properties of doped Sb2Te phase change line cells

F.J. Jedema; M.A.A. in ‘t Zandt; Robertus A.M. Wolters; D. Tio Castro; G.A.M. Hurkx; R. Delhounge; D.J. Gravesteijn; Dirk J Gravesteijn; K. Attenborough

doi:10.1109/NVSMW.2008.18

Scaling properties of doped Sb₂Te phase change line cells

F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D. Tio Castro, G.A.M. Hurkx, R. Delhounge, D.J. Gravesteijn, Dirk J Gravesteijn, K. Attenborough

Research output: Contribution to conference › Paper › Academic › peer-review

3 Citations (Scopus)

Abstract

For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

Original language	Undefined
Pages	43-45
Number of pages	3
DOIs	https://doi.org/10.1109/NVSMW.2008.18
Publication status	Published - 18 May 2008

Keywords

IR-76693
phase change memories
EWI-20007
line cell
chalgogenide materials
PCRAM
Scaling

Access to Document

10.1109/NVSMW.2008.18

http://eprints.eemcs.utwente.nl/secure2/20007/01/jedema.pdf

Cite this

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title = "Scaling properties of doped Sb2Te phase change line cells",

abstract = "For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.",

keywords = "IR-76693, phase change memories, EWI-20007, line cell, chalgogenide materials, PCRAM, Scaling",

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T1 - Scaling properties of doped Sb2Te phase change line cells

AU - Jedema, F.J.

AU - in ‘t Zandt, M.A.A.

AU - Wolters, Robertus A.M.

AU - Tio Castro, D.

AU - Hurkx, G.A.M.

AU - Delhounge, R.

AU - Gravesteijn, D.J.

AU - Gravesteijn, Dirk J

AU - Attenborough, K.

PY - 2008/5/18

Y1 - 2008/5/18

N2 - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

AB - For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.

KW - IR-76693

KW - phase change memories

KW - EWI-20007

KW - line cell

KW - chalgogenide materials

KW - PCRAM

KW - Scaling

U2 - 10.1109/NVSMW.2008.18

DO - 10.1109/NVSMW.2008.18

M3 - Paper

SP - 43

EP - 45

ER -