Scaling properties of doped Sb2Te phase change line cells

F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D. Tio Castro, G.A.M. Hurkx, R. Delhounge, D.J. Gravesteijn, Dirk J Gravesteijn, K. Attenborough

    Research output: Contribution to conferencePaperAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.
    Original languageUndefined
    Pages43-45
    Number of pages3
    DOIs
    Publication statusPublished - 18 May 2008

    Keywords

    • IR-76693
    • phase change memories
    • EWI-20007
    • line cell
    • chalgogenide materials
    • PCRAM
    • Scaling

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