Abstract
For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determine the transistor size and hence the obtainable memory density. Finally, the programming voltage should preferably not exceed the transistor driving voltage. In this paper, the scaling perspective for these 3 main programming parameters is investigated for doped Sb2Te PCRAM line cells.
Original language | English |
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Pages | 43-45 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 18 May 2008 |
Event | 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD - Ogura, Taku Duration: 18 May 2008 → 18 May 2008 |
Conference
Conference | 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD |
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Period | 18/05/08 → 18/05/08 |
Keywords
- Phase change memories
- Line cell
- Chalgogenide materials
- PCRAM
- Scaling