"Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces"

Henricus J.W. Zandvliet; H.B. Elswijk; E.J. van Loenen; I.S.T. Tsong

doi:10.1103/PhysRevB.46.7581

"Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces"

Henricus J.W. Zandvliet, H.B. Elswijk, E.J. van Loenen, I.S.T. Tsong

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Abstract

Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750 °C for 2 min, complete (7×7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).

Original language	Undefined
Pages (from-to)	7581-7587
Number of pages	7
Journal	Physical Review B (Condensed Matter)
Volume	0
Issue number	46
DOIs	https://doi.org/10.1103/PhysRevB.46.7581
Publication status	Published - 1992

Keywords

METIS-128910
IR-73162

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10.1103/PhysRevB.46.7581

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Cite this

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title = "{"}Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces{"}",

abstract = "Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750 °C for 2 min, complete (7×7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).",

keywords = "METIS-128910, IR-73162",

author = "Zandvliet, {Henricus J.W.} and H.B. Elswijk and {van Loenen}, E.J. and I.S.T. Tsong",

year = "1992",

doi = "10.1103/PhysRevB.46.7581",

language = "Undefined",

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pages = "7581--7587",

journal = "Physical review B: Covering condensed matter and materials physics",

issn = "2469-9950",

publisher = "American Institute of Physics",

number = "46",

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TY - JOUR

T1 - "Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces"

AU - Zandvliet, Henricus J.W.

AU - Elswijk, H.B.

AU - van Loenen, E.J.

AU - Tsong, I.S.T.

PY - 1992

Y1 - 1992

N2 - Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750 °C for 2 min, complete (7×7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).

AB - Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750 °C for 2 min, complete (7×7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).

KW - METIS-128910

KW - IR-73162

U2 - 10.1103/PhysRevB.46.7581

DO - 10.1103/PhysRevB.46.7581

M3 - Article

VL - 0

SP - 7581

EP - 7587

JO - Physical review B: Covering condensed matter and materials physics

JF - Physical review B: Covering condensed matter and materials physics

SN - 2469-9950

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ER -