Schottky barrier height modulation by ultra-shallow low-dose dopant diffusion

Miloš Popadić*, Lis K. Nanver, Tom L.M. Scholtes

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

Arsenic deposited as a monolayer of pure As on silicon by chemical-vapour-deposition (CVD) epitaxy and capped by an oxide layer has been investigated for the first time as a dopant diffusion source when using anneal temperatures below 900 °C. Schottky diodes of Al to n-and p-type Si with and without such an As-doped surface layer were fabricated. The I-V diode characteristics show that a very small but significant amount of As diffuses into the Si already at 700 °C and that this amount increases with increasing temperature. Thus, when going from 700 °C to 900 °C, on p-type wafers a transition from a low-barrier Schottky diode to an n+p junction diode is seen while on n-type wafers the initially high Schottky barrier is lowered until an n+n ohmic contact is formed. Moreover, sheet resistance measurements and SIMS of capped As-doped layers where performed showing that diffusion depths below 5 nm are achieved.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
Pages469-471
Number of pages3
DOIs
Publication statusPublished - 2 Aug 2007
Externally publishedYes
Event8th International Conference on Solid-State and Integrated Circuit Technology 2006 - Shanghai, China
Duration: 23 Oct 200626 Oct 2006
Conference number: 8

Conference

Conference8th International Conference on Solid-State and Integrated Circuit Technology 2006
Abbreviated titleICSICT-2006
CountryChina
CityShanghai
Period23/10/0626/10/06

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