Schottky barriers at hexagonal boron nitride/metal interfaces: A first-principles study

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Abstract

The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h−BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal|h−BN interface and effectively lowers the metal work function. If h−BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag, and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h−BN from the metal surface. The interface potential step is largest when h−BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates
Original languageUndefined
Pages (from-to)085415/1-085415/11
Number of pages11
JournalPhysical review B: Condensed matter and materials physics
Volume90
DOIs
Publication statusPublished - 2014

Keywords

  • METIS-305334
  • IR-94911

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