Seedless electroplating on patterned silicon

Laura Dolores Vargas Llona, Henricus V. Jansen, Michael Curt Elwenspoek

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    Abstract

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate bath on both n+- and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the removal of the native oxide layer is presented which allows uniform plating of patterned substrates.
    Original languageUndefined
    Pages (from-to)1-6
    Number of pages6
    JournalJournal of micromechanics and microengineering
    Volume16
    Issue number6
    DOIs
    Publication statusPublished - 20 Jan 2006

    Keywords

    • EWI-9101
    • METIS-248480
    • IR-59592

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