Selective Chemical Vapor Deposition

J. Holleman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Selective area deposition has received much attention in IC technology in the past forty years. Its advantage in IC technology is that one saves a mask and a full sequence of lithography, etching, resist removal and cleaning. In Selective Chemical Vapor Deposition (CVD) the selectivity is obtained by the different chemical behavior of reactants with different surfaces. The advantage of selective CVD is the self-alignment with respect to the previous pattern, which allows for tight design-rules in this phase of the IC production. Selective epitaxial Silicon deposition was investigated in the sixties of the last century. Later selective Tungsten, selective epitaxial SiGe, selective IH-V and II-VI compounds and recently selective deposition of Copper became intensively researched subjects. In these cases of selective deposition one etches a window in a dielectric to the substrate and then deposits the required layer. Due to nucleation matters it starts to grow immediately on the substrate material whereas the nucleation on the dielectric is retarded. However, in nature one never gets advantages for free. Selectivity loss, reaction with the substrate material, facetting, lateral overgrowth on the dielectric and pattern-density dependency are major problems.
    Original languageEnglish
    Title of host publicationChemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies
    EditorsYves Pauleau
    Place of PublicationDordrecht
    PublisherKluwer Academic Publishers
    Pages171-198
    Number of pages28
    ISBN (Electronic)978-94-010-0353-7
    ISBN (Print)978-1-4020-0525-1
    DOIs
    Publication statusPublished - 2002
    EventNATO Advanced Study Institute on Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies 2001 - Kaunas, Lithuania
    Duration: 3 Sep 200114 Sep 2001

    Publication series

    NameNATO Science Series II: Mathematics, Physics and Chemistry
    PublisherKluwer Academic Publishers
    Volume55
    ISSN (Print)1568-2609

    Conference

    ConferenceNATO Advanced Study Institute on Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies 2001
    CountryLithuania
    CityKaunas
    Period3/09/0114/09/01

    Keywords

    • METIS-206170
    • Reduction Reaction
    • Chemical Mechanical Polishing
    • Selectivity Loss
    • Nucleus Density
    • Selective Deposition

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