Selective deposition of Tungsten

Alexey Y. Kovalgin; Mengdi  Yang; Antonius A.I. Aarnink; Robertus A.M. Wolters

Selective deposition of Tungsten

Alexey Y. Kovalgin (Inventor), Mengdi Yang (Inventor), Antonius A.I. Aarnink (Inventor), Robertus A.M. Wolters (Inventor)

Research output: Patent

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Abstract

A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

Original language	English
Patent number	US 2018/0025939 A1
Priority date	6/06/17
Publication status	Published - 25 Jan 2018

Cite this

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title = "Selective deposition of Tungsten",

abstract = "A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.",

author = "Kovalgin, {Alexey Y.} and Mengdi Yang and Aarnink, {Antonius A.I.} and Wolters, {Robertus A.M.}",

year = "2018",

month = jan,

day = "25",

language = "English",

type = "Patent",

note = "US 2018/0025939 A1",

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TY - PAT

T1 - Selective deposition of Tungsten

AU - Kovalgin, Alexey Y.

AU - Yang, Mengdi

AU - Aarnink, Antonius A.I.

AU - Wolters, Robertus A.M.

PY - 2018/1/25

Y1 - 2018/1/25

N2 - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

AB - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

M3 - Patent

M1 - US 2018/0025939 A1

ER -

Selective deposition of Tungsten

Abstract

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