Selective deposition of Tungsten

Alexey Y. Kovalgin (Inventor), Mengdi Yang (Inventor), Antonius A.I. Aarnink (Inventor), Robertus A.M. Wolters (Inventor)

Research output: PatentProfessional

2 Downloads (Pure)

Abstract

A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.
Original languageEnglish
Patent numberUS 2018/0025939 A1
Priority date6/06/17
Publication statusPublished - 25 Jan 2018

Fingerprint

Tungsten
Hydrogen
Substrates
Metals
Wire

Cite this

@misc{da6e91fb0f5f4677b656524feda75dc0,
title = "Selective deposition of Tungsten",
abstract = "A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.",
author = "Kovalgin, {Alexey Y.} and Mengdi Yang and Aarnink, {Antonius A.I.} and Wolters, {Robertus A.M.}",
year = "2018",
month = "1",
day = "25",
language = "English",
type = "Patent",
note = "US 2018/0025939 A1",

}

Selective deposition of Tungsten. / Kovalgin, Alexey Y. (Inventor); Yang, Mengdi (Inventor); Aarnink, Antonius A.I. (Inventor); Wolters, Robertus A.M. (Inventor).

Patent No.: US 2018/0025939 A1.

Research output: PatentProfessional

TY - PAT

T1 - Selective deposition of Tungsten

AU - Kovalgin, Alexey Y.

AU - Yang, Mengdi

AU - Aarnink, Antonius A.I.

AU - Wolters, Robertus A.M.

PY - 2018/1/25

Y1 - 2018/1/25

N2 - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

AB - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

M3 - Patent

M1 - US 2018/0025939 A1

ER -

Kovalgin AY, Yang M, Aarnink AAI, Wolters RAM, inventors. Selective deposition of Tungsten. US 2018/0025939 A1. 2018 Jan 25.