A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.
|Patent number||US 2018/0025939 A1|
|Publication status||Published - 25 Jan 2018|