Selective deposition of Tungsten

Alexey Y. Kovalgin (Inventor), Mengdi Yang (Inventor), Antonius A.I. Aarnink (Inventor), Robertus A.M. Wolters (Inventor)

    Research output: Patent

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    Abstract

    A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.
    Original languageEnglish
    Patent numberUS 2018/0025939 A1
    Priority date6/06/17
    Publication statusPublished - 25 Jan 2018

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    Tungsten
    Hydrogen
    Substrates
    Metals
    Wire

    Cite this

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    title = "Selective deposition of Tungsten",
    abstract = "A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.",
    author = "Kovalgin, {Alexey Y.} and Mengdi Yang and Aarnink, {Antonius A.I.} and Wolters, {Robertus A.M.}",
    year = "2018",
    month = "1",
    day = "25",
    language = "English",
    type = "Patent",
    note = "US 2018/0025939 A1",

    }

    TY - PAT

    T1 - Selective deposition of Tungsten

    AU - Kovalgin, Alexey Y.

    AU - Yang, Mengdi

    AU - Aarnink, Antonius A.I.

    AU - Wolters, Robertus A.M.

    PY - 2018/1/25

    Y1 - 2018/1/25

    N2 - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

    AB - A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.

    M3 - Patent

    M1 - US 2018/0025939 A1

    ER -

    Kovalgin AY, Yang M, Aarnink AAI, Wolters RAM, inventors. Selective deposition of Tungsten. US 2018/0025939 A1. 2018 Jan 25.