Selective deposition of Tungsten

Alexey Y. Kovalgin (Inventor), Mengdi Yang (Inventor), Antonius A.I. Aarnink (Inventor), Robertus A.M. Wolters (Inventor)

    Research output: Patent

    2 Downloads (Pure)

    Abstract

    A method for selectively depositing a metal nlm onto a substrate is disclosed. In particular, the method comprising nowing a metal precursor onto the substrate and nowing a non-metal precursor onto the substrate,while contacting the non-metal precursor with a hot wire. Specincally, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten nlm, where the hydrogen precursor is excited by a tungsten hot wire.
    Original languageEnglish
    Patent numberUS 2018/0025939 A1
    Priority date6/06/17
    Publication statusPublished - 25 Jan 2018

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