Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems

A. Pruijmboom*, D. Terpstra, C.E. Timmering, W.B. de Boer, M.J.J. Theunissen, J.W. Slotboom, R.J.E. Hueting, J.J.E.M. Hageraats

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

33 Citations (Scopus)
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Abstract

A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as Si/SiGe-multilayer bases are applied. Both result in excellent device performance, with cut-off and maximum oscillation frequencies up to 45 GHz, and ECL-gate delays down to 13.7 ps. DC-coupled broad-band amplifiers for 15 Gbit/s optical data links have been fabricated, providing record bandwidths of 13.2 GHz. As selective epitaxial growth is performed at 700°C in a production epitaxial reactor, this technology can easily be combined with current semiconductor manufacturing technology.

Original languageEnglish
Title of host publicationProceedings of International Electron Devices Meeting 1995
PublisherIEEE
Pages747-750
Number of pages4
ISBN (Print)0-7803-2700-4
DOIs
Publication statusPublished - 1 Dec 1995
Externally publishedYes
EventIEEE International Electron Devices Meeting, IEDM 1995 - Washington, United States
Duration: 10 Dec 199513 Dec 1995

Publication series

NameProceedings of International Electron Devices Meeting
PublisherIEEE
Volume1995
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, IEDM 1995
Abbreviated titleIEDM 1995
CountryUnited States
CityWashington
Period10/12/9513/12/95

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  • Cite this

    Pruijmboom, A., Terpstra, D., Timmering, C. E., de Boer, W. B., Theunissen, M. J. J., Slotboom, J. W., ... Hageraats, J. J. E. M. (1995). Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems. In Proceedings of International Electron Devices Meeting 1995 (pp. 747-750). (Proceedings of International Electron Devices Meeting; Vol. 1995). IEEE. https://doi.org/10.1109/IEDM.1995.499326