Sub-micron structures of high-Tc thin films have been realized with Selective Epitaxial Growth (SEG). Two different techniques to achieve SEG have been studied. First, narrow trenches down to 100 nm are etched into the substrate with a four-layer E-beam lithography technique. Second, amorphous metal layers have been used to define pattern definition masks. Besides the suitability of both techniques, also the potential to combine these techniques is part of this study.