Skip to main navigation Skip to search Skip to main content

Selective growth of GexSi1-x for elevated source and drain in deep submicron MOS

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationBest Western Dish Hotel, Enschede
    Publication statusPublished - 14 Jun 1995

    Keywords

    • METIS-114880

    Cite this