Selective SiO2 etching in three dimensional structures using parylene-C as mask

Henk-Willem  Veltkamp; Yiyuan  Zhao; Meint J. de Boer; Remco J. Wiegerink; Joost Conrad Lötters

Abstract

This abstract describes an application of an easy and straightforward
method for selective SiO2 etching in three dimensional structures, which
is developed by our group. The application in this abstract is the protection
of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.

Original language	English
Pages	380
Publication status	Published - 19 Sept 2017
Event	43rd International Conference on Micro and Nanoengineering - International Iberian Nanotechnology Laboratory, Braga, Portugal Duration: 19 Sept 2017 → 22 Sept 2017 http://mne2017.org/

Conference

Conference	43rd International Conference on Micro and Nanoengineering
Abbreviated title	MNE2017
Country/Territory	Portugal
City	Braga
Period	19/09/17 → 22/09/17
Internet address	http://mne2017.org/

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title = "Selective SiO2 etching in three dimensional structures using parylene-C as mask",

abstract = "This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.",

author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",

year = "2017",

month = sep,

day = "19",

language = "English",

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T1 - Selective SiO2 etching in three dimensional structures using parylene-C as mask

AU - Veltkamp, Henk-Willem

AU - Zhao, Yiyuan

AU - de Boer, Meint J.

AU - Wiegerink, Remco J.

AU - Lötters, Joost Conrad

PY - 2017/9/19

Y1 - 2017/9/19

N2 - This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.

AB - This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.

UR - http://www.mne2017.org

M3 - Abstract

SP - 380

T2 - 43rd International Conference on Micro and Nanoengineering

Y2 - 19 September 2017 through 22 September 2017

ER -

Selective SiO2 etching in three dimensional structures using parylene-C as mask

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Conference

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