Selective SiO2 etching in three dimensional structures using parylene-C as mask

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    Abstract

    This abstract describes an application of an easy and straightforward
    method for selective SiO2 etching in three dimensional structures, which
    is developed by our group. The application in this abstract is the protection
    of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.
    Original languageEnglish
    Pages380
    Publication statusPublished - 19 Sep 2017

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