Selective SiO2 etching in three dimensional structures using parylene-C as mask

    Research output: Contribution to conferenceAbstractOther research output

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    Abstract

    This abstract describes an application of an easy and straightforward
    method for selective SiO2 etching in three dimensional structures, which
    is developed by our group. The application in this abstract is the protection
    of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.
    Original languageEnglish
    Pages380
    Publication statusPublished - 19 Sep 2017

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    Masks
    Etching
    Oxides
    Packaging materials
    Reactive ion etching
    Chemical sensors
    Silicon
    Polymers
    Processing

    Cite this

    @conference{6a672755a47a4fc18ade80999014666a,
    title = "Selective SiO2 etching in three dimensional structures using parylene-C as mask",
    abstract = "This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.",
    author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",
    year = "2017",
    month = "9",
    day = "19",
    language = "English",
    pages = "380",

    }

    Selective SiO2 etching in three dimensional structures using parylene-C as mask. / Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad.

    2017. 380.

    Research output: Contribution to conferenceAbstractOther research output

    TY - CONF

    T1 - Selective SiO2 etching in three dimensional structures using parylene-C as mask

    AU - Veltkamp, Henk-Willem

    AU - Zhao, Yiyuan

    AU - de Boer, Meint J.

    AU - Wiegerink, Remco J.

    AU - Lötters, Joost Conrad

    PY - 2017/9/19

    Y1 - 2017/9/19

    N2 - This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.

    AB - This abstract describes an application of an easy and straightforwardmethod for selective SiO2 etching in three dimensional structures, whichis developed by our group. The application in this abstract is the protectionof the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against SiO2 hard mask stripping in BHF after deep reactive ion etching (DRIE) in the device layer, where the BOX layer serves as etch stop. It enables further processing like refilling of trenches and other structures with preservation of the BOX layer, which can serve as sacrificial layer or electrical isolation. The BOX layer protection is done with parylene-C. This is a poly(monochloro-p-xylylene) polymer, which is traditionally used to coat implantable devices, used as protective packaging material in (chemical) sensors, or as actual shapeable material in devices. The presented method adds mask material for selective SiO2 etching to the list.

    UR - http://www.mne2017.org

    M3 - Abstract

    SP - 380

    ER -