Selective solid-phase silicon epitaxy of p+ aluminum-doped contacts for nanoscale devices

Yann Civale*, Lis K. Nanver, Hugo Schellevis

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

A solid-phase epitaxy (SPE) process based on material inversion of an amorphous silicon (α-Si) on aluminum layer-stack is applied to form ultrashallow p-type junctions. In this paper, we demonstrate the controllability of the whole process when the junction area is reduced to the sub-100-nm range and the processing temperature is reduced to 400°C. The SPE-Si to Si-substrate interface, analyzed locally by transmission electron microscopy and more systematically by the fabrication and electrical characterization of p+ -n diodes, was found to be practically defect-free. Moreover, it is demonstrated by capacitance-voltage profiling that the Al-dopants do not diffuse into the bulk silicon for the used processing temperatures and the SPE p+ -island to n-substrate transition is ideally abrupt. The I-V characteristics of the as-fabricated p+-n diodes are near ideal (n = 1.03) and low-ohmic contact resistance to p- and p+ regions is reliably obtained.

Original languageEnglish
Pages (from-to)196-200
Number of pages5
JournalIEEE transactions on nanotechnology
Volume6
Issue number2
DOIs
Publication statusPublished - 1 Mar 2007
Externally publishedYes

Keywords

  • Al-doping
  • Elevated source/drain
  • Low-ohmic contacts
  • Low-temperature processing
  • Metal-induced crystallization
  • p-n-p bipolar junction transistors
  • Selective epitaxial growth
  • Solid-phase epitaxy
  • Ultrashallow junctions

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