Selenidation of epitaxial silicene on ZrB2

F.B. Wiggers (Corresponding Author), Y. Yamada-Takamura, A.Y. Kovalgin, M. P. de Jong

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Abstract

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.
Original languageEnglish
Pages (from-to)793-797
Number of pages5
JournalApplied surface science
Volume428
Early online date20 Sep 2017
DOIs
Publication statusPublished - 15 Jan 2018

Keywords

  • Silicene
  • Selenium
  • Transition metal diboride
  • Low-energy electron diffraction
  • Photoelectron spectroscopy

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