Selenidation of epitaxial silicene on ZrB2

F.B. Wiggers (Corresponding Author), Y. Yamada-Takamura, A.Y. Kovalgin, M. P. de Jong

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Abstract

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.
Original languageEnglish
Pages (from-to)793-797
Number of pages5
JournalApplied surface science
Volume428
Early online date20 Sep 2017
DOIs
Publication statusPublished - 15 Jan 2018

Keywords

  • Silicene
  • Selenium
  • Transition metal diboride
  • Low-energy electron diffraction
  • Photoelectron spectroscopy

Cite this

Wiggers, F.B. ; Yamada-Takamura, Y. ; Kovalgin, A.Y. ; de Jong, M. P. / Selenidation of epitaxial silicene on ZrB2. In: Applied surface science. 2018 ; Vol. 428. pp. 793-797.
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abstract = "The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.",
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Selenidation of epitaxial silicene on ZrB2. / Wiggers, F.B. (Corresponding Author); Yamada-Takamura, Y.; Kovalgin, A.Y.; de Jong, M. P.

In: Applied surface science, Vol. 428, 15.01.2018, p. 793-797.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Selenidation of epitaxial silicene on ZrB2

AU - Wiggers, F.B.

AU - Yamada-Takamura, Y.

AU - Kovalgin, A.Y.

AU - de Jong, M. P.

PY - 2018/1/15

Y1 - 2018/1/15

N2 - The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.

AB - The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.

KW - Silicene

KW - Selenium

KW - Transition metal diboride

KW - Low-energy electron diffraction

KW - Photoelectron spectroscopy

U2 - 10.1016/j.apsusc.2017.09.167

DO - 10.1016/j.apsusc.2017.09.167

M3 - Article

VL - 428

SP - 793

EP - 797

JO - Applied surface science

JF - Applied surface science

SN - 0169-4332

ER -