TY - JOUR
T1 - Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process
AU - Rusu, C.R.
AU - Jansen, Henricus V.
AU - Gunn, R.
AU - Witvrouw, A.
PY - 2004/8/1
Y1 - 2004/8/1
N2 - Many micro electromechanical systems (MEMS)
require a vacuum or controlled atmosphere encapsulation
in order to ensure either a good performance or an
acceptable lifetime of operation. Two approaches for waferscale
zero-level packaging exist. The most popular
approach is based on wafer bonding. Alternatively,
encapsulation can be done by the fabrication and sealing of
perforated surface micromachined membranes.
In this paper, a sealing method is proposed for zero-level
packaging using a thin film reflow technique. This sealing
method can be done at arbitrary ambient and pressure.
Also, it is self-aligned and it can be used for sealing
openings directly above the MEMS device. It thus allows for
a smaller die area for the sealing ring reducing in this way
the device dimensions and costs.
The sealing method has been demonstrated with reflowed
aluminium, germanium, and boron phosphorous
silica glass. This allows for conducting as well as nonconducting
sealing layers and for a variety of allowable
thermal budgets. The proposed technique is therefore very
versatile.
AB - Many micro electromechanical systems (MEMS)
require a vacuum or controlled atmosphere encapsulation
in order to ensure either a good performance or an
acceptable lifetime of operation. Two approaches for waferscale
zero-level packaging exist. The most popular
approach is based on wafer bonding. Alternatively,
encapsulation can be done by the fabrication and sealing of
perforated surface micromachined membranes.
In this paper, a sealing method is proposed for zero-level
packaging using a thin film reflow technique. This sealing
method can be done at arbitrary ambient and pressure.
Also, it is self-aligned and it can be used for sealing
openings directly above the MEMS device. It thus allows for
a smaller die area for the sealing ring reducing in this way
the device dimensions and costs.
The sealing method has been demonstrated with reflowed
aluminium, germanium, and boron phosphorous
silica glass. This allows for conducting as well as nonconducting
sealing layers and for a variety of allowable
thermal budgets. The proposed technique is therefore very
versatile.
U2 - 10.1007/s00542-004-0415-2
DO - 10.1007/s00542-004-0415-2
M3 - Article
SN - 0946-7076
VL - 10
SP - 364
EP - 371
JO - Microsystem technologies
JF - Microsystem technologies
IS - 5
ER -