Self-Aligned Formation and Positioning of Nanogap Templates

Dean De Boer; Erwin Berenschot; Yasser Pordeli; Niels Tas

doi:10.1109/NMDC57951.2023.10344109

Self-Aligned Formation and Positioning of Nanogap Templates

Dean De Boer^*, Erwin Berenschot, Yasser Pordeli, Niels Tas^*

^*Corresponding author for this work

Mesoscale Chemical Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Downloads (Pure)

Abstract

This paper presents a versatile and scalable method for generating sub 20 nm nanogaps based on standard I-line lithography. The nanogaps are self-aligned to lithographically patterned features and make use of a combination of corner lithography, edge retraction, and sidewall oxidization. We demonstrate the flexibility of this approach by extending it to include coaxial holes in the center of the circular nanogaps, and by filling of the nanogaps with platinum silicide to create nanowires.

Original language	English
Title of host publication	2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
Publisher	IEEE
Pages	284-289
Number of pages	6
ISBN (Electronic)	979-8-3503-3546-0
ISBN (Print)	979-8-3503-3547-7
DOIs	https://doi.org/10.1109/NMDC57951.2023.10344109
Publication status	Published - 12 Dec 2023
Event	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy Duration: 22 Oct 2023 → 25 Oct 2023 Conference number: 18

Publication series

Name
ISSN (Print)	2378-377X
ISSN (Electronic)	2473-0718

Conference

Conference	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Abbreviated title	NMDC 2023
Country/Territory	Italy
City	Paestum
Period	22/10/23 → 25/10/23

Keywords

2024 OA procedure

Access to Document

10.1109/NMDC57951.2023.10344109

ArticleFinal published version, 1.27 MBLicence: Taverne

Cite this

@inproceedings{50abb8d3741347ec87bd37fe8e62684c,

title = "Self-Aligned Formation and Positioning of Nanogap Templates",

abstract = "This paper presents a versatile and scalable method for generating sub 20 nm nanogaps based on standard I-line lithography. The nanogaps are self-aligned to lithographically patterned features and make use of a combination of corner lithography, edge retraction, and sidewall oxidization. We demonstrate the flexibility of this approach by extending it to include coaxial holes in the center of the circular nanogaps, and by filling of the nanogaps with platinum silicide to create nanowires.",

keywords = "2024 OA procedure",

author = "Boer, {Dean De} and Erwin Berenschot and Yasser Pordeli and Niels Tas",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

year = "2023",

month = dec,

day = "12",

doi = "10.1109/NMDC57951.2023.10344109",

language = "English",

isbn = "979-8-3503-3547-7",

publisher = "IEEE",

pages = "284--289",

booktitle = "2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)",

address = "United States",

}

TY - GEN

T1 - Self-Aligned Formation and Positioning of Nanogap Templates

AU - Boer, Dean De

AU - Berenschot, Erwin

AU - Pordeli, Yasser

AU - Tas, Niels

N1 - Conference code: 18

PY - 2023/12/12

Y1 - 2023/12/12

N2 - This paper presents a versatile and scalable method for generating sub 20 nm nanogaps based on standard I-line lithography. The nanogaps are self-aligned to lithographically patterned features and make use of a combination of corner lithography, edge retraction, and sidewall oxidization. We demonstrate the flexibility of this approach by extending it to include coaxial holes in the center of the circular nanogaps, and by filling of the nanogaps with platinum silicide to create nanowires.

AB - This paper presents a versatile and scalable method for generating sub 20 nm nanogaps based on standard I-line lithography. The nanogaps are self-aligned to lithographically patterned features and make use of a combination of corner lithography, edge retraction, and sidewall oxidization. We demonstrate the flexibility of this approach by extending it to include coaxial holes in the center of the circular nanogaps, and by filling of the nanogaps with platinum silicide to create nanowires.

KW - 2024 OA procedure

U2 - 10.1109/NMDC57951.2023.10344109

DO - 10.1109/NMDC57951.2023.10344109

M3 - Conference contribution

AN - SCOPUS:85182029413

SN - 979-8-3503-3547-7

SP - 284

EP - 289

BT - 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)

PB - IEEE

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Y2 - 22 October 2023 through 25 October 2023

ER -

Self-Aligned Formation and Positioning of Nanogap Templates

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this