Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers

H. W. Van Zeijl*, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A process is presented by which the metal base electrode of a BJT is self-aligned to the emitter. The emitter and base electrodes are separated and planarised using low-stress silicon-nitride spacers and photoresist planarisation and etch back. This provides a flat device topography with a high yield.

Original languageEnglish
Title of host publication27th European Solid-State Device Research Conference 1997
EditorsH. Grunbacher
PublisherIEEE Computer Society Press
Pages248-251
Number of pages4
ISBN (Electronic)2863322214
DOIs
Publication statusPublished - 1 Jan 1997
Externally publishedYes
Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
Duration: 22 Sep 199724 Sep 1997
Conference number: 27

Conference

Conference27th European Solid-State Device Research Conference, ESSDERC 1997
Abbreviated titleESSDERC 1997
CountryGermany
CityStuttgart
Period22/09/9724/09/97

Fingerprint Dive into the research topics of 'Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers'. Together they form a unique fingerprint.

Cite this