Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers

H.W. van Zeijl; L.K. Nanver

doi:10.1109/ESSDERC.1997.194412

Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers

H.W. van Zeijl^*, L.K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A process is presented by which the metal base electrode of a BJT is self-aligned to the emitter. The emitter and base electrodes are separated and planarised using low-stress silicon-nitride spacers and photoresist planarisation and etch back. This provides a flat device topography with a high yield.

Original language	English
Title of host publication	27th European Solid-State Device Research Conference 1997
Editors	H. Grunbacher
Publisher	IEEE
Pages	248-251
Number of pages	4
ISBN (Electronic)	2863322214
DOIs	https://doi.org/10.1109/ESSDERC.1997.194412
Publication status	Published - 1 Jan 1997
Externally published	Yes
Event	27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany Duration: 22 Sept 1997 → 24 Sept 1997 Conference number: 27

Conference

Conference	27th European Solid-State Device Research Conference, ESSDERC 1997
Abbreviated title	ESSDERC 1997
Country/Territory	Germany
City	Stuttgart
Period	22/09/97 → 24/09/97

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10.1109/ESSDERC.1997.194412

https://ieeexplore.ieee.org/document/1503342

Cite this

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title = "Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers",

abstract = "A process is presented by which the metal base electrode of a BJT is self-aligned to the emitter. The emitter and base electrodes are separated and planarised using low-stress silicon-nitride spacers and photoresist planarisation and etch back. This provides a flat device topography with a high yield.",

author = "{van Zeijl}, H.W. and L.K. Nanver",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.1997.194412",

language = "English",

pages = "248--251",

editor = "H. Grunbacher",

booktitle = "27th European Solid-State Device Research Conference 1997",

publisher = "IEEE",

address = "United States",

note = "27th European Solid-State Device Research Conference, ESSDERC 1997, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",

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T1 - Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers

AU - van Zeijl, H.W.

AU - Nanver, L.K.

N1 - Conference code: 27

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A process is presented by which the metal base electrode of a BJT is self-aligned to the emitter. The emitter and base electrodes are separated and planarised using low-stress silicon-nitride spacers and photoresist planarisation and etch back. This provides a flat device topography with a high yield.

AB - A process is presented by which the metal base electrode of a BJT is self-aligned to the emitter. The emitter and base electrodes are separated and planarised using low-stress silicon-nitride spacers and photoresist planarisation and etch back. This provides a flat device topography with a high yield.

UR - http://www.scopus.com/inward/record.url?scp=84907567141&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.1997.194412

DO - 10.1109/ESSDERC.1997.194412

M3 - Conference contribution

AN - SCOPUS:84907567141

SP - 248

EP - 251

BT - 27th European Solid-State Device Research Conference 1997

A2 - Grunbacher, H.

PB - IEEE

T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997

Y2 - 22 September 1997 through 24 September 1997

ER -

Self-aligned metallization of high-frequency BJT with low-stress silicon-nitride spacers

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