Self-assembled three-dimensional non-volatile memories

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    Abstract

    The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
    Original languageEnglish
    Number of pages18
    JournalMicromachines
    Volume1
    Issue number1
    DOIs
    Publication statusPublished - 18 Jan 2010

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    Keywords

    • ring core
    • EWI-17411
    • TST-Self Assembly
    • TST-uSPAM: micro Scanning Probe Array Memory
    • TST-SMI: Formerly in EWI-SMI
    • Self-Assembly
    • IR-70002
    • Magnetic
    • Data Storage
    • MEMS
    • METIS-277396

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