Self-assembled three-dimensional non-volatile memories

Research output: Contribution to journalArticle

  • 5 Citations

Abstract

The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
LanguageEnglish
Number of pages18
JournalMicromachines
Volume1
Issue number1
DOIs
StatePublished - 18 Jan 2010

Fingerprint

Self assembly
Data storage equipment
Anisotropic etching
Memory architecture
Lithography
Transistors
Single crystals
Silicon
Atoms

Keywords

  • ring core
  • EWI-17411
  • TST-Self Assembly
  • TST-uSPAM: micro Scanning Probe Array Memory
  • TST-SMI: Formerly in EWI-SMI
  • Self-Assembly
  • IR-70002
  • Magnetic
  • Data Storage
  • MEMS
  • METIS-277396

Cite this

@article{303f225fda63402c8bdf24552ba9a4f9,
title = "Self-assembled three-dimensional non-volatile memories",
abstract = "The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.",
keywords = "ring core, EWI-17411, TST-Self Assembly, TST-uSPAM: micro Scanning Probe Array Memory, TST-SMI: Formerly in EWI-SMI, Self-Assembly, IR-70002, Magnetic, Data Storage, MEMS, METIS-277396",
author = "Leon Abelmann and Niels Tas and Erwin Berenschot and Miko Elwenspoek",
note = "From internal report EPrints 15686",
year = "2010",
month = "1",
day = "18",
doi = "10.3390/mi1010001",
language = "English",
volume = "1",
journal = "Micromachines",
issn = "2072-666X",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "1",

}

Self-assembled three-dimensional non-volatile memories. / Abelmann, Leon; Tas, Niels; Berenschot, Erwin; Elwenspoek, Miko.

In: Micromachines, Vol. 1, No. 1, 18.01.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Self-assembled three-dimensional non-volatile memories

AU - Abelmann,Leon

AU - Tas,Niels

AU - Berenschot,Erwin

AU - Elwenspoek,Miko

N1 - From internal report EPrints 15686

PY - 2010/1/18

Y1 - 2010/1/18

N2 - The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.

AB - The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.

KW - ring core

KW - EWI-17411

KW - TST-Self Assembly

KW - TST-uSPAM: micro Scanning Probe Array Memory

KW - TST-SMI: Formerly in EWI-SMI

KW - Self-Assembly

KW - IR-70002

KW - Magnetic

KW - Data Storage

KW - MEMS

KW - METIS-277396

U2 - 10.3390/mi1010001

DO - 10.3390/mi1010001

M3 - Article

VL - 1

JO - Micromachines

T2 - Micromachines

JF - Micromachines

SN - 2072-666X

IS - 1

ER -