Self-limiting growth and thickness- and temperature-dependence of optical constants of ALD AlN thin films

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Abstract

We have investigated the growth characteristics and optical constants of thin AlN films made by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH3). We observed the nucleation, closure and growth after closure of the films using atomic force microscopy and in-situ spectroscopic ellipsometry. A fully covered surface was obtained for films with a thickness of about 2 nm. The self-limiting ALD growth was observed at temperatures of 330 and 350◦C with deposition rates of 1.5 and 2.1 Å/cycle, respectively. At 370◦C, thermal decomposition of TMA dominated the growth mechanism, resulting in a fast and non-self-limiting deposition. Low concentrations of oxygen (0.8−2.5%) and carbon (5−7.5%) incorporated into the films were measured. We found that the refractive index increased remarkably with increasing film thickness and growth temperature.
Original languageEnglish
Pages (from-to)P101-P106
Number of pages6
JournalECS journal of solid state science and technology
Volume3
Issue number4
DOIs
Publication statusPublished - 20 Feb 2014

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Optical constants
Atomic layer deposition
Thin films
Temperature
Spectroscopic ellipsometry
Growth temperature
Film growth
Deposition rates
Ammonia
Film thickness
Atomic force microscopy
Refractive index
Pyrolysis
Nucleation
Carbon
Oxygen

Keywords

  • IR-89616
  • EWI-24568
  • METIS-303199

Cite this

@article{e8a57adee9254a99916dcc039e863019,
title = "Self-limiting growth and thickness- and temperature-dependence of optical constants of ALD AlN thin films",
abstract = "We have investigated the growth characteristics and optical constants of thin AlN films made by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH3). We observed the nucleation, closure and growth after closure of the films using atomic force microscopy and in-situ spectroscopic ellipsometry. A fully covered surface was obtained for films with a thickness of about 2 nm. The self-limiting ALD growth was observed at temperatures of 330 and 350◦C with deposition rates of 1.5 and 2.1 {\AA}/cycle, respectively. At 370◦C, thermal decomposition of TMA dominated the growth mechanism, resulting in a fast and non-self-limiting deposition. Low concentrations of oxygen (0.8−2.5{\%}) and carbon (5−7.5{\%}) incorporated into the films were measured. We found that the refractive index increased remarkably with increasing film thickness and growth temperature.",
keywords = "IR-89616, EWI-24568, METIS-303199",
author = "{Van Bui}, H. and M.d. Nguyen and F.B. Wiggers and A.A.I. Aarnink and {de Jong}, M.P. and A.Y. Kovalgin",
year = "2014",
month = "2",
day = "20",
doi = "10.1149/2.020404jss",
language = "English",
volume = "3",
pages = "P101--P106",
journal = "ECS journal of solid state science and technology",
issn = "2162-8769",
publisher = "The Electrochemical Society Inc.",
number = "4",

}

Self-limiting growth and thickness- and temperature-dependence of optical constants of ALD AlN thin films. / Van Bui, H.; Nguyen, M.d.; Wiggers, F.B.; Aarnink, A.A.I.; de Jong, M.P.; Kovalgin, A.Y.

In: ECS journal of solid state science and technology, Vol. 3, No. 4, 20.02.2014, p. P101-P106.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Self-limiting growth and thickness- and temperature-dependence of optical constants of ALD AlN thin films

AU - Van Bui, H.

AU - Nguyen, M.d.

AU - Wiggers, F.B.

AU - Aarnink, A.A.I.

AU - de Jong, M.P.

AU - Kovalgin, A.Y.

PY - 2014/2/20

Y1 - 2014/2/20

N2 - We have investigated the growth characteristics and optical constants of thin AlN films made by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH3). We observed the nucleation, closure and growth after closure of the films using atomic force microscopy and in-situ spectroscopic ellipsometry. A fully covered surface was obtained for films with a thickness of about 2 nm. The self-limiting ALD growth was observed at temperatures of 330 and 350◦C with deposition rates of 1.5 and 2.1 Å/cycle, respectively. At 370◦C, thermal decomposition of TMA dominated the growth mechanism, resulting in a fast and non-self-limiting deposition. Low concentrations of oxygen (0.8−2.5%) and carbon (5−7.5%) incorporated into the films were measured. We found that the refractive index increased remarkably with increasing film thickness and growth temperature.

AB - We have investigated the growth characteristics and optical constants of thin AlN films made by thermal atomic layer deposition (ALD) from trimethylaluminum (TMA) and ammonia (NH3). We observed the nucleation, closure and growth after closure of the films using atomic force microscopy and in-situ spectroscopic ellipsometry. A fully covered surface was obtained for films with a thickness of about 2 nm. The self-limiting ALD growth was observed at temperatures of 330 and 350◦C with deposition rates of 1.5 and 2.1 Å/cycle, respectively. At 370◦C, thermal decomposition of TMA dominated the growth mechanism, resulting in a fast and non-self-limiting deposition. Low concentrations of oxygen (0.8−2.5%) and carbon (5−7.5%) incorporated into the films were measured. We found that the refractive index increased remarkably with increasing film thickness and growth temperature.

KW - IR-89616

KW - EWI-24568

KW - METIS-303199

U2 - 10.1149/2.020404jss

DO - 10.1149/2.020404jss

M3 - Article

VL - 3

SP - P101-P106

JO - ECS journal of solid state science and technology

JF - ECS journal of solid state science and technology

SN - 2162-8769

IS - 4

ER -