Self-organized, one demensional Pt nanowires on Ge(001)

O. Gurlu; Henricus J.W. Zandvliet; Omer A.O. Adam; Bene Poelsema

doi:10.1063/1.1630383

Self-organized, one demensional Pt nanowires on Ge(001)

O. Gurlu, Henricus J.W. Zandvliet, Omer A.O. Adam, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Pt atoms adsorbed onto Ge(001) surface form extremely well-ordered nanowire arrays by self-organization after high-temperature annealing. Using scanning tunneling spectroscopy/microscopy, it is shown that they are metallic and defect free. They are only 0.4 nm thick with a spacing of 1.6 nm in between, and have aspect ratios up to 1000. Their formation can be discussed in terms of a relativistic property possessed by heaviest 5d elements, and the pathway to their formation can be explained by dimer breakup on Ge(001) surface at elevated temperatures followed by a surface polymerization reaction

Original language	Undefined
Pages (from-to)	4610-4612
Number of pages	3
Journal	Applied physics letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1630383
Publication status	Published - 2003

Keywords

METIS-214154
IR-73076

Access to Document

10.1063/1.1630383

Cite this

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abstract = "Pt atoms adsorbed onto Ge(001) surface form extremely well-ordered nanowire arrays by self-organization after high-temperature annealing. Using scanning tunneling spectroscopy/microscopy, it is shown that they are metallic and defect free. They are only 0.4 nm thick with a spacing of 1.6 nm in between, and have aspect ratios up to 1000. Their formation can be discussed in terms of a relativistic property possessed by heaviest 5d elements, and the pathway to their formation can be explained by dimer breakup on Ge(001) surface at elevated temperatures followed by a surface polymerization reaction",

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AU - Gurlu, O.

AU - Zandvliet, Henricus J.W.

AU - Adam, Omer A.O.

AU - Poelsema, Bene

PY - 2003

Y1 - 2003

N2 - Pt atoms adsorbed onto Ge(001) surface form extremely well-ordered nanowire arrays by self-organization after high-temperature annealing. Using scanning tunneling spectroscopy/microscopy, it is shown that they are metallic and defect free. They are only 0.4 nm thick with a spacing of 1.6 nm in between, and have aspect ratios up to 1000. Their formation can be discussed in terms of a relativistic property possessed by heaviest 5d elements, and the pathway to their formation can be explained by dimer breakup on Ge(001) surface at elevated temperatures followed by a surface polymerization reaction

AB - Pt atoms adsorbed onto Ge(001) surface form extremely well-ordered nanowire arrays by self-organization after high-temperature annealing. Using scanning tunneling spectroscopy/microscopy, it is shown that they are metallic and defect free. They are only 0.4 nm thick with a spacing of 1.6 nm in between, and have aspect ratios up to 1000. Their formation can be discussed in terms of a relativistic property possessed by heaviest 5d elements, and the pathway to their formation can be explained by dimer breakup on Ge(001) surface at elevated temperatures followed by a surface polymerization reaction

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KW - IR-73076

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