Self phase modulation and stimulated raman scattering due to high power femtosecond pulse propagation in silicon-on-insulator waveguides

P. Mégret (Editor), R. Dekker, M. Wuilpart (Editor), E.J. Klein, J. Niehusmann, S. Bette (Editor), N. Staquet (Editor), M. Först, F. Ondracek, J. Ctyroky, N. Usechak, A. Driessen

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    Abstract

    Self Phase Modulation (SPM) and Stimulated Raman Scattering (SRS) in silicon waveguides have been observed and will be discussed theoretically using a modified Nonlinear Schrödinger Equation. The high optical peak powers needed for the experiments were obtained by coupling sub-picosecond (200fs) transform limited pulses with a spectral width of 12nm into a single mode silicon waveguide. Spectral broadening up to 50nm has been observed due to Self Phase Modulation. An intensity increase of the idler spectrum around 1650nm at the expense of the 1550nm pump signal has been observed as function of pump power, indicating the presence of Stimulated Raman Scattering.
    Original languageUndefined
    Pages197-200
    Number of pages4
    Publication statusPublished - 1 Dec 2005
    Event10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005 - Mons, Belgium
    Duration: 1 Dec 20082 Dec 2008
    Conference number: 10

    Conference

    Conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005
    CountryBelgium
    CityMons
    Period1/12/082/12/08

    Keywords

    • EWI-12344
    • IR-58224
    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

    Cite this

    Mégret, P. (Ed.), Dekker, R., Wuilpart, M. (Ed.), Klein, E. J., Niehusmann, J., Bette, S. (Ed.), ... Driessen, A. (2005). Self phase modulation and stimulated raman scattering due to high power femtosecond pulse propagation in silicon-on-insulator waveguides. 197-200. Paper presented at 10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005, Mons, Belgium.