Semiconductor processing apparatus with compact free radical source

    Research output: Patent

    17 Downloads (Pure)

    Abstract

    A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).
    Original languageUndefined
    Patent numberUS2013337653 (A1)
    Priority date14/06/13
    Publication statusPublished - 19 Dec 2013

    Keywords

    • IR-89305
    • EWI-24371
    • METIS-302675

    Cite this

    @misc{43696899c8aa46bf9fe1081022f69337,
    title = "Semiconductor processing apparatus with compact free radical source",
    abstract = "A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).",
    keywords = "IR-89305, EWI-24371, METIS-302675",
    author = "Kovalgin, {Alexeij Y.} and Aarnink, {Antonius A.I.}",
    year = "2013",
    month = "12",
    day = "19",
    language = "Undefined",
    type = "Patent",
    note = "US2013337653 (A1)",

    }

    TY - PAT

    T1 - Semiconductor processing apparatus with compact free radical source

    AU - Kovalgin, Alexeij Y.

    AU - Aarnink, Antonius A.I.

    PY - 2013/12/19

    Y1 - 2013/12/19

    N2 - A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).

    AB - A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an electric resistance heating filament (244); a sleeve (220) with a central sleeve axis (L), wherein said sleeve defines a reaction space (222) that accommodates the heating filament (244), and wherein said sleeve includes an inlet opening (224) via which the reaction space is fluidly connected to the precursor gas source (250), and an outlet opening (228) via which the reaction space is fluidly connected to the substrate processing chamber (158), said inlet and outlet openings (224, 228) being spaced apart along the central sleeve axis (L).

    KW - IR-89305

    KW - EWI-24371

    KW - METIS-302675

    M3 - Patent

    M1 - US2013337653 (A1)

    ER -