Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors

N. Nenadović*, L.K. Nanver, H. Schellevis, D. de Mooij, V. Zieren, J.W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.

Original languageEnglish
Title of host publicationProceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002
Pages77-82
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2002
Externally publishedYes
Event2002 International Conference on Microelectronic Test Structures - Cork, Ireland
Duration: 8 Apr 200211 Apr 2002

Conference

Conference2002 International Conference on Microelectronic Test Structures
Abbreviated titleICMTS 2002
CountryIreland
CityCork
Period8/04/0211/04/02

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