Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors

N. Nenadović; L.K. Nanver; H. Schellevis; D. de Mooij; V. Zieren; J.W. Slotboom

doi:10.1109/ICMTS.2002.1193175

Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors

N. Nenadović^*, L.K. Nanver, H. Schellevis, D. de Mooij, V. Zieren, J.W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.

Original language	English
Title of host publication	Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002
Pages	77-82
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2002.1193175
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	2002 International Conference on Microelectronic Test Structures - Cork, Ireland Duration: 8 Apr 2002 → 11 Apr 2002

Conference

Conference	2002 International Conference on Microelectronic Test Structures
Abbreviated title	ICMTS 2002
Country/Territory	Ireland
City	Cork
Period	8/04/02 → 11/04/02

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10.1109/ICMTS.2002.1193175

Cite this

@inproceedings{5ffc2238e8d245cc954fd2af36847819,

title = "Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors",

abstract = "A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.",

author = "N. Nenadovi{\'c} and L.K. Nanver and H. Schellevis and {de Mooij}, D. and V. Zieren and J.W. Slotboom",

year = "2002",

month = dec,

day = "1",

doi = "10.1109/ICMTS.2002.1193175",

language = "English",

isbn = "0-7803-7464-9",

pages = "77--82",

booktitle = "Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002",

note = "2002 International Conference on Microelectronic Test Structures , ICMTS 2002 ; Conference date: 08-04-2002 Through 11-04-2002",

}

Nenadović, N, Nanver, LK, Schellevis, H, de Mooij, D, Zieren, V & Slotboom, JW 2002, Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors. in Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. pp. 77-82, 2002 International Conference on Microelectronic Test Structures , Cork, Ireland, 8/04/02. https://doi.org/10.1109/ICMTS.2002.1193175

Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors. / Nenadović, N.; Nanver, L.K.; Schellevis, H. et al.
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. 2002. p. 77-82.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors

AU - Nenadović, N.

AU - Nanver, L.K.

AU - Schellevis, H.

AU - de Mooij, D.

AU - Zieren, V.

AU - Slotboom, J.W.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.

AB - A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.

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U2 - 10.1109/ICMTS.2002.1193175

DO - 10.1109/ICMTS.2002.1193175

M3 - Conference contribution

AN - SCOPUS:0037481719

SN - 0-7803-7464-9

SP - 77

EP - 82

BT - Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002

T2 - 2002 International Conference on Microelectronic Test Structures

Y2 - 8 April 2002 through 11 April 2002

ER -

Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors

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