Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena

Jing Li, Sergii Pud, Michail Petrychuk, Andreas Offenhäusser, Svetlana Vitusevich*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

44 Citations (Scopus)

Abstract

Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.

Original languageEnglish
Pages (from-to)3504-3509
Number of pages6
JournalNano letters
Volume14
Issue number6
DOIs
Publication statusPublished - 11 Jun 2014
Externally publishedYes

Keywords

  • biosensors
  • field effect transistor
  • Nanowire
  • random telegraph signal (RTS) noise
  • single trap

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