Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena

Jing Li; Sergii Pud; Michail Petrychuk; Andreas Offenhäusser; Svetlana Vitusevich

doi:10.1021/nl5010724

Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena

Jing Li, Sergii Pud, Michail Petrychuk, Andreas Offenhäusser, Svetlana Vitusevich^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

56 Citations (Scopus)

Abstract

Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.

Original language	English
Pages (from-to)	3504-3509
Number of pages	6
Journal	Nano letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1021/nl5010724
Publication status	Published - 11 Jun 2014
Externally published	Yes

Keywords

biosensors
field effect transistor
Nanowire
random telegraph signal (RTS) noise
single trap

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10.1021/nl5010724

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abstract = "Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.",

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AU - Pud, Sergii

AU - Petrychuk, Michail

AU - Offenhäusser, Andreas

AU - Vitusevich, Svetlana

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.

AB - Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.

KW - biosensors

KW - field effect transistor

KW - Nanowire

KW - random telegraph signal (RTS) noise

KW - single trap

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JO - Nano letters

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Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena

Abstract

Keywords

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