Separation of random telegraph signals from 1/f noise in MOSFETs

J.S. Kolhatkar; Cora Salm; Hans Wallinga

Separation of random telegraph signals from 1/f noise in MOSFETs

J.S. Kolhatkar, Cora Salm, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.

Original language	Undefined
Title of host publication	Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	614-617
Number of pages	4
ISBN (Print)	90-73461-39-1
Publication status	Published - 25 Nov 2003
Event	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6

Publication series

Name
Publisher	STW Technology Foundation

Conference

Conference	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Keywords

LF Noise
EWI-15566
1/f noise
MOSFETs
METIS-213262
IR-67743

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15566/01/kolhatkar.pdf

Cite this

Kolhatkar, J. S., Salm, C., & Wallinga, H. (2003). Separation of random telegraph signals from 1/f noise in MOSFETs. In Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003 (pp. 614-617). Utrecht, The Netherlands: STW.

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title = "Separation of random telegraph signals from 1/f noise in MOSFETs",

abstract = "The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.",

keywords = "LF Noise, EWI-15566, 1/f noise, MOSFETs, METIS-213262, IR-67743",

author = "J.S. Kolhatkar and Cora Salm and Hans Wallinga",

year = "2003",

month = "11",

day = "25",

language = "Undefined",

isbn = "90-73461-39-1",

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Kolhatkar, JS, Salm, C & Wallinga, H 2003, Separation of random telegraph signals from 1/f noise in MOSFETs. in Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003. STW, Utrecht, The Netherlands, pp. 614-617, 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands, 25/11/03.

Separation of random telegraph signals from 1/f noise in MOSFETs. / Kolhatkar, J.S.; Salm, Cora; Wallinga, Hans.

Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003. Utrecht, The Netherlands : STW, 2003. p. 614-617.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Separation of random telegraph signals from 1/f noise in MOSFETs

AU - Kolhatkar, J.S.

AU - Salm, Cora

AU - Wallinga, Hans

PY - 2003/11/25

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N2 - The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.

AB - The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.

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BT - Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003

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