The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.
|Title of host publication||Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 25 Nov 2003|
|Event||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 26 Nov 2003
Conference number: 6
|Publisher||STW Technology Foundation|
|Conference||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Period||25/11/03 → 26/11/03|
- LF Noise
- 1/f noise
Kolhatkar, J. S., Salm, C., & Wallinga, H. (2003). Separation of random telegraph signals from 1/f noise in MOSFETs. In Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003 (pp. 614-617). Utrecht, The Netherlands: STW.