Separation of random telegraph signals from 1/f noise in MOSFETs

J.S. Kolhatkar, Cora Salm, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic


    The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the ‘noisy’ RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.
    Original languageUndefined
    Title of host publicationProceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003
    Place of PublicationUtrecht, The Netherlands
    Number of pages4
    ISBN (Print)90-73461-39-1
    Publication statusPublished - 25 Nov 2003
    Event6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands
    Duration: 25 Nov 200326 Nov 2003
    Conference number: 6

    Publication series

    PublisherSTW Technology Foundation


    Conference6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
    Abbreviated titleSAFE


    • LF Noise
    • EWI-15566
    • 1/f noise
    • MOSFETs
    • METIS-213262
    • IR-67743

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