Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions

J.S. Kolhatkar; L.K.J. Vandamme; Cora Salm; Hans Wallinga

doi:10.1109/ESSDERC.2003.1256935

Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions

J.S. Kolhatkar, L.K.J. Vandamme, Cora Salm, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

17 Citations (Scopus)

235 Downloads (Pure)

Abstract

The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.

Original language	Undefined
Title of host publication	33rd Conference on European Solid-State Device Research 2003 (ESSDERC)
Place of Publication	Piscataway
Publisher	IEEE
Pages	549-552
Number of pages	4
ISBN (Print)	0780379993
DOIs	https://doi.org/10.1109/ESSDERC.2003.1256935
Publication status	Published - 7 Jan 2004
Event	33rd European Solid-State Device Research Conference, ESSDERC 2003 - Lisboa, Portugal Duration: 16 Sept 2003 → 18 Sept 2003 Conference number: 33

Publication series

Name
Publisher	IEEE

Conference

Conference	33rd European Solid-State Device Research Conference, ESSDERC 2003
Abbreviated title	ESSDERC
Country/Territory	Portugal
City	Lisboa
Period	16/09/03 → 18/09/03

Keywords

METIS-213271
IR-45794
1/f noise
MOSFET
Gaussian distribution
Semiconductor device measurement
EWI-15553

Access to Document

10.1109/ESSDERC.2003.1256935

kolhatkar

Cite this

@inproceedings{97740e1f0bf24fb9a12d9643dd070247,

title = "Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions",

abstract = "The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.",

keywords = "METIS-213271, IR-45794, 1/f noise, MOSFET, Gaussian distribution, Semiconductor device measurement, EWI-15553",

author = "J.S. Kolhatkar and L.K.J. Vandamme and Cora Salm and Hans Wallinga",

year = "2004",

month = jan,

day = "7",

doi = "10.1109/ESSDERC.2003.1256935",

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publisher = "IEEE",

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booktitle = "33rd Conference on European Solid-State Device Research 2003 (ESSDERC)",

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note = "33rd European Solid-State Device Research Conference, ESSDERC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",

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Kolhatkar, JS, Vandamme, LKJ, Salm, C & Wallinga, H 2004, Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions. in 33rd Conference on European Solid-State Device Research 2003 (ESSDERC). IEEE, Piscataway, pp. 549-552, 33rd European Solid-State Device Research Conference, ESSDERC 2003, Lisboa, Portugal, 16/09/03. https://doi.org/10.1109/ESSDERC.2003.1256935

Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions. / Kolhatkar, J.S.; Vandamme, L.K.J.; Salm, Cora et al.
33rd Conference on European Solid-State Device Research 2003 (ESSDERC). Piscataway: IEEE, 2004. p. 549-552.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions

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AU - Salm, Cora

AU - Wallinga, Hans

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AB - The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.

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