Separation of random telegraph sSignals from 1/f noise in MOSFETs under constant and switched bias conditions

J.S. Kolhatkar, L.K.J. Vandamme, Cora Salm, Hans Wallinga

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    Abstract

    The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.
    Original languageUndefined
    Title of host publication33rd Conference on European Solid-State Device Research 2003 (ESSDERC)
    Place of PublicationPiscataway
    PublisherIEEE
    Pages549-552
    Number of pages4
    ISBN (Print)0780379993
    DOIs
    Publication statusPublished - 7 Jan 2004
    Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Lisboa, Portugal
    Duration: 16 Sep 200318 Sep 2003
    Conference number: 33

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference33rd European Solid-State Device Research Conference, ESSDERC 2003
    Abbreviated titleESSDERC
    CountryPortugal
    CityLisboa
    Period16/09/0318/09/03

    Keywords

    • METIS-213271
    • IR-45794
    • 1/f noise
    • MOSFET
    • Gaussian distribution
    • Semiconductor device measurement
    • EWI-15553

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