Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

Lin Qi*, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.

Original languageEnglish
Title of host publication2015 International Conference on Microelectronic Test Structures (ICMTS)
PublisherIEEE
Pages169-174
Number of pages6
ISBN (Electronic)978-1-4799-8304-9
ISBN (Print)978-1-4799-8302-5
DOIs
Publication statusPublished - 12 May 2015
Externally publishedYes
Event28th International Conference on Microelectronic Test Structures, ICMTS 2015 - Hilton Hotel Phoenix, Tempe, United States
Duration: 23 Mar 201526 Mar 2015
Conference number: 28
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

Conference

Conference28th International Conference on Microelectronic Test Structures, ICMTS 2015
Abbreviated titleICMTS
CountryUnited States
CityTempe
Period23/03/1526/03/15
Internet address

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Cite this

Qi, L., & Nanver, L. K. (2015). Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si. In 2015 International Conference on Microelectronic Test Structures (ICMTS) (pp. 169-174). [7106135] IEEE. https://doi.org/10.1109/ICMTS.2015.7106135