Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

Lin Qi; Lis K. Nanver

doi:10.1109/ICMTS.2015.7106135

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

Lin Qi^*, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

2 Downloads (Pure)

Abstract

Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.

Original language	English
Title of host publication	2015 International Conference on Microelectronic Test Structures (ICMTS)
Publisher	IEEE
Pages	169-174
Number of pages	6
ISBN (Electronic)	978-1-4799-8304-9
ISBN (Print)	978-1-4799-8302-5
DOIs	https://doi.org/10.1109/ICMTS.2015.7106135
Publication status	Published - 12 May 2015
Externally published	Yes
Event	28th International Conference on Microelectronic Test Structures, ICMTS 2015 - Hilton Hotel Phoenix, Tempe, United States Duration: 23 Mar 2015 → 26 Mar 2015 Conference number: 28 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

Conference

Conference	28th International Conference on Microelectronic Test Structures, ICMTS 2015
Abbreviated title	ICMTS
Country/Territory	United States
City	Tempe
Period	23/03/15 → 26/03/15
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

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10.1109/ICMTS.2015.7106135

Cite this

@inproceedings{a1c338b0409448e899e4c5347057c491,

title = "Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si",

abstract = "Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.",

author = "Lin Qi and Nanver, \{Lis K.\}",

year = "2015",

month = may,

day = "12",

doi = "10.1109/ICMTS.2015.7106135",

language = "English",

isbn = "978-1-4799-8302-5",

pages = "169--174",

booktitle = "2015 International Conference on Microelectronic Test Structures (ICMTS)",

publisher = "IEEE",

address = "United States",

note = "28th International Conference on Microelectronic Test Structures, ICMTS 2015, ICMTS ; Conference date: 23-03-2015 Through 26-03-2015",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html",

}

Qi, L & Nanver, LK 2015, Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si. in 2015 International Conference on Microelectronic Test Structures (ICMTS)., 7106135, IEEE, pp. 169-174, 28th International Conference on Microelectronic Test Structures, ICMTS 2015, Tempe, Arizona, United States, 23/03/15. https://doi.org/10.1109/ICMTS.2015.7106135

TY - GEN

T1 - Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

AU - Qi, Lin

AU - Nanver, Lis K.

N1 - Conference code: 28

PY - 2015/5/12

Y1 - 2015/5/12

N2 - Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.

AB - Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.

UR - https://www.scopus.com/pages/publications/84940730129

U2 - 10.1109/ICMTS.2015.7106135

DO - 10.1109/ICMTS.2015.7106135

M3 - Conference contribution

AN - SCOPUS:84940730129

SN - 978-1-4799-8302-5

SP - 169

EP - 174

BT - 2015 International Conference on Microelectronic Test Structures (ICMTS)

PB - IEEE

T2 - 28th International Conference on Microelectronic Test Structures, ICMTS 2015

Y2 - 23 March 2015 through 26 March 2015

ER -

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

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