Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios

Tamer Dogan; Roy Verbeek; Auke J. Kronemeijer; Peter A. Bobbert; Gerwin H. Gelinck; Wilfred G. van der Wiel

doi:10.1002/aelm.201900041

Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios

Tamer Dogan, Roy Verbeek, Auke J. Kronemeijer, Peter A. Bobbert, Gerwin H. Gelinck, Wilfred G. van der Wiel^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 ⁶ are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm ⁻² and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.

Original language	English
Article number	1900041
Journal	Advanced electronic materials
Volume	5
Issue number	5
DOIs	https://doi.org/10.1002/aelm.201900041
Publication status	Published - May 2019

Keywords

UT-Hybrid-D
polymer semiconductors
short-channel effects
vertical organic field-effect transistors
organic electronics

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10.1002/aelm.201900041

Dogan-2019-ShortchannelFinal published version, 1.08 MBLicence: Taverne

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title = "Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios",

abstract = " A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required. ",

keywords = "UT-Hybrid-D, polymer semiconductors, short-channel effects, vertical organic field-effect transistors, organic electronics",

author = "Tamer Dogan and Roy Verbeek and Kronemeijer, {Auke J.} and Bobbert, {Peter A.} and Gelinck, {Gerwin H.} and {van der Wiel}, {Wilfred G.}",

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AU - Dogan, Tamer

AU - Verbeek, Roy

AU - Kronemeijer, Auke J.

AU - Bobbert, Peter A.

AU - Gelinck, Gerwin H.

AU - van der Wiel, Wilfred G.

N1 - Wiley deal

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Y1 - 2019/5

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AB - A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.

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Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios

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