Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios

Tamer Dogan, Roy Verbeek, Auke J. Kronemeijer, Peter A. Bobbert, Gerwin H. Gelinck, Wilfred G. van der Wiel*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)
33 Downloads (Pure)


A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.

Original languageEnglish
Article number1900041
JournalAdvanced electronic materials
Issue number5
Publication statusPublished - May 2019


  • UT-Hybrid-D
  • polymer semiconductors
  • short-channel effects
  • vertical organic field-effect transistors
  • organic electronics


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