Abstract
A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.
Original language | English |
---|---|
Pages (from-to) | 900-904 |
Number of pages | 5 |
Journal | Advanced materials |
Volume | 16 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2004 |
Keywords
- IR-47732
- METIS-218578