Si-compatible ion selective oxide interconnects with high tunability

R. Schmuhl, J. Sekulic, S. Roy Chowdhury, C.J.M. van Rijn, Klaas Keizer, Albert van den Berg, Johan E. ten Elshof, David H.A. Blank

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.
Original languageEnglish
Pages (from-to)900-904
Number of pages5
JournalAdvanced materials
Volume16
Issue number11
DOIs
Publication statusPublished - 2004

Keywords

  • IR-47732
  • METIS-218578

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