Si-compatible ion selective oxide interconnects with high tunability

R. Schmuhl; J. Sekulic; S. Roy Chowdhury; C.J.M. van Rijn; Klaas Keizer; Albert van den Berg; Johan E. ten Elshof; David H.A. Blank

doi:10.1002/adma.200306660

Si-compatible ion selective oxide interconnects with high tunability

R. Schmuhl, J. Sekulic, S. Roy Chowdhury, C.J.M. van Rijn, Klaas Keizer, Albert van den Berg, Johan E. ten Elshof, David H.A. Blank

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

5 Downloads (Pure)

Abstract

A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.

Original language	English
Pages (from-to)	900-904
Number of pages	5
Journal	Advanced materials
Volume	16
Issue number	11
DOIs	https://doi.org/10.1002/adma.200306660
Publication status	Published - 2004

Keywords

IR-47732
METIS-218578

Access to Document

10.1002/adma.200306660

Cite this

@article{f8b444813dc541629d732c8dcc40e26d,

title = "Si-compatible ion selective oxide interconnects with high tunability",

abstract = "A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.",

keywords = "IR-47732, METIS-218578",

author = "R. Schmuhl and J. Sekulic and {Roy Chowdhury}, S. and {van Rijn}, C.J.M. and Klaas Keizer and {van den Berg}, Albert and {ten Elshof}, {Johan E.} and Blank, {David H.A.}",

year = "2004",

doi = "10.1002/adma.200306660",

language = "English",

volume = "16",

pages = "900--904",

journal = "Advanced materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "11",

}

TY - JOUR

T1 - Si-compatible ion selective oxide interconnects with high tunability

AU - Schmuhl, R.

AU - Sekulic, J.

AU - Roy Chowdhury, S.

AU - van Rijn, C.J.M.

AU - Keizer, Klaas

AU - van den Berg, Albert

AU - ten Elshof, Johan E.

AU - Blank, David H.A.

PY - 2004

Y1 - 2004

N2 - A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.

AB - A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference.

KW - IR-47732

KW - METIS-218578

U2 - 10.1002/adma.200306660

DO - 10.1002/adma.200306660

M3 - Article

SN - 0935-9648

VL - 16

SP - 900

EP - 904

JO - Advanced materials

JF - Advanced materials

IS - 11

ER -

Si-compatible ion selective oxide interconnects with high tunability

Abstract

Keywords

Access to Document

Fingerprint

Cite this