Si-containing block coploymers for self-assembled nanolithography

C.A. Ross, Y.S. Jung, V.P. Chuang, F. Llievski, J.K.W. Yang, I. Bita, E.L. Thomas, Henry I. Smith, K.K. Berggren, G.J. Vancso, J.Y. Cheng

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing for self-assembled lithography because of the high etch contrast between the blocks, the high etch resistance of the Si-containing block, and the high Flory–Huggins interaction parameter, which is expected to minimize line edge roughness. The locations and long range order of the microdomains can be controlled using shallow topographical features. Pattern generation from poly(styrene)-poly(ferrocenyldimethylsilane) and poly(styrene)-poly(dimethylsiloxane) block copolymers, and the subsequent pattern transfer into metal, oxide, and polymer films, is described
Original languageEnglish
Pages (from-to)2489-2494
Number of pages6
JournalJournal of vacuum science and technology. B: Microelectronics and nanometer structures
Volume26
Issue number6
DOIs
Publication statusPublished - 2008

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