Si nanowire field effect transistors: Effect of gamma radiation treatment

S. Vitusevich; J. Li; S. Pud; A. Offenhaeusser; M. Petrychuk; B. Danilchenko

doi:10.1109/ICNF.2013.6578946

Si nanowire field effect transistors: Effect of gamma radiation treatment

S. Vitusevich, J. Li, S. Pud, A. Offenhaeusser, M. Petrychuk, B. Danilchenko

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.

Original language	English
Title of host publication	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-4799-0671-0
ISBN (Print)	978-1-4799-0668-0
DOIs	https://doi.org/10.1109/ICNF.2013.6578946
Publication status	Published - 2013
Externally published	Yes
Event	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France Duration: 24 Jun 2013 → 28 Jun 2013

Conference

Conference	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Country/Territory	France
City	Montpellier
Period	24/06/13 → 28/06/13

Keywords

Field effect transistors
Gamma radiation treatment
Nanowire
Noise spectroscopy
Silicon

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10.1109/ICNF.2013.6578946

Cite this

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title = "Si nanowire field effect transistors: Effect of gamma radiation treatment",

abstract = "We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.",

keywords = "Field effect transistors, Gamma radiation treatment, Nanowire, Noise spectroscopy, Silicon",

author = "S. Vitusevich and J. Li and S. Pud and A. Offenhaeusser and M. Petrychuk and B. Danilchenko",

year = "2013",

doi = "10.1109/ICNF.2013.6578946",

language = "English",

isbn = "978-1-4799-0668-0",

booktitle = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013",

publisher = "IEEE",

note = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 ; Conference date: 24-06-2013 Through 28-06-2013",

}

Vitusevich, S, Li, J, Pud, S, Offenhaeusser, A, Petrychuk, M & Danilchenko, B 2013, Si nanowire field effect transistors: Effect of gamma radiation treatment. in 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013., 6578946, IEEE, Piscataway, NJ, 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, 24/06/13. https://doi.org/10.1109/ICNF.2013.6578946

TY - GEN

T1 - Si nanowire field effect transistors

T2 - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

AU - Vitusevich, S.

AU - Li, J.

AU - Pud, S.

AU - Offenhaeusser, A.

AU - Petrychuk, M.

AU - Danilchenko, B.

PY - 2013

Y1 - 2013

N2 - We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.

AB - We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.

KW - Field effect transistors

KW - Gamma radiation treatment

KW - Nanowire

KW - Noise spectroscopy

KW - Silicon

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U2 - 10.1109/ICNF.2013.6578946

DO - 10.1109/ICNF.2013.6578946

M3 - Conference contribution

AN - SCOPUS:84883672881

SN - 978-1-4799-0668-0

BT - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

PB - IEEE

CY - Piscataway, NJ

Y2 - 24 June 2013 through 28 June 2013

ER -

Si nanowire field effect transistors: Effect of gamma radiation treatment

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