Si nanowire field effect transistors: Effect of gamma radiation treatment

S. Vitusevich, J. Li, S. Pud, A. Offenhaeusser, M. Petrychuk, B. Danilchenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes in the charge states of dielectric traps after the influence of low doses of gamma irradiation. This approach is promising for nanoelectronic applications, including biosensors.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of PublicationPiscataway, NJ
PublisherIEEE
ISBN (Electronic)978-1-4799-0671-0
ISBN (Print)978-1-4799-0668-0
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: 24 Jun 201328 Jun 2013

Conference

Conference2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period24/06/1328/06/13

Keywords

  • Field effect transistors
  • Gamma radiation treatment
  • Nanowire
  • Noise spectroscopy
  • Silicon

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